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MCR69-2

Onsemi

MCR69-2 by Onsemi

MCR69-2 by Onsemi is a single SCR with max DC gate trigger current of 30mA and non-repetitive peak on-state current of 300A. It has a package style of flange mount and is used in applications requiring high on-state current handling capabilities.

Median Price

$1.174

Lifecycle Status

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15

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1k+

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Freelance Electronics

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Ace Electronics

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Corel Iberica Componentes, S.L.

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Prism Electronics

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Manotoh

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Electronic Expediters

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MISTER SPROCKETS

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Mil-Aero Solutions, Inc.

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Fibra_Brandt Electronic GMBH

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Corohmni

South Africa . 480 parts In-Stock

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Component Stockers USA

USA . 3,626 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Kepictronics

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

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Overview

Enhance your electronic systems with the MCR69-2 by Onsemi, a high-quality Silicon Controlled Rectifier designed for optimal performance and reliability. Manufactured by Onsemi, a trusted industry leader, this SCR offers seamless integration and exceptional functionality in various applications. With a maximum RMS On-state Current of 25A and a Non Repetitive Peak On-state Current of 300A, the MCR69-2 delivers superior performance while maintaining efficiency. Upgrade your projects with the value and benefits that this product brings, ensuring smooth operation and enhanced productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, which is ideal for applications where weight and durability are important factors.

Maximum DC Gate Trigger Current: 30 mA

The high maximum DC gate trigger current ensures reliable and efficient triggering of the SCR, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration of the SCR into various electronic systems, making it user-friendly.

Non Repetitive Peak On-state Current: 300 A

The high non-repetitive peak on-state current rating allows the SCR to handle high current surges, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient heat dissipation and easy mounting, enhancing the overall performance and reliability of the SCR.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection to the circuit board, ensuring stable operation of the SCR in various environmental conditions.

Maximum On-state Current: 25 A

The high maximum on-state current rating allows the SCR to handle moderate power loads with ease, making it versatile for a wide range of applications.

Maximum Leakage Current: 2 mA

The low maximum leakage current ensures minimal power loss and efficient operation of the SCR, making it energy-efficient.

Repetitive Peak Reverse Voltage: 50 V

The high repetitive peak reverse voltage rating ensures reliable operation and protection against reverse voltage spikes, enhancing the overall robustness of the SCR.

No. of Terminals: 3

The 3-terminal configuration simplifies the wiring and connections, making it easy to integrate the SCR into various electronic systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and easy installation of the SCR, making it convenient for industrial applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature rating ensures reliable operation of the SCR in high-temperature environments, making it suitable for industrial applications.

Trigger Device Type: SCR

Being an SCR, the trigger device type provides reliable and efficient switching capabilities, making it ideal for various power control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature rating allows the SCR to operate in extreme cold conditions, making it suitable for a wide range of environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and resistance to corrosion, ensuring long-term reliability of the SCR in different environments.

Terminal Position: SINGLE

The single terminal position simplifies the wiring and connections, making it easy to integrate the SCR into various electronic systems.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current rating allows the SCR to handle moderate power loads with ease, making it versatile for a wide range of applications.

Maximum DC Gate Trigger Voltage: 1.5 V

The low maximum DC gate trigger voltage ensures efficient triggering of the SCR with minimal power consumption, making it energy-efficient.

Case Connection: ANODE

The anode case connection offers a secure and reliable connection, ensuring stable operation of the SCR in various applications.

Repetitive Peak Off-state Voltage: 50 V

The high repetitive peak off-state voltage rating ensures reliable operation and protection against voltage spikes, making it suitable for various switching applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The minimum critical rate of rise of off-state voltage ensures fast and efficient turn-off of the SCR, reducing the risk of voltage spikes and improving overall performance.

Maximum Holding Current: 50 mA

The high maximum holding current rating ensures stable operation of the SCR in the off-state, making it reliable for continuous switching applications.

Nominal Circuit Commutated Turn-off Time: 1 us

The low nominal circuit commutated turn-off time ensures fast and efficient turn-off of the SCR, reducing power loss and improving overall system efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR69-2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

1 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

300 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR69-2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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