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MCR100-004

Onsemi

MCR100-004 by Onsemi

The Onsemi MCR100-004 is a single SCR with max. DC gate trigger current of 0.2mA and non-repetitive peak on-state current of 10A. It operates in temp range -40 to 110 °C, ideal for applications requiring a max. RMS on-state current of 0.8A such as power control systems.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,532 parts In-Stock

1+ parts

$0.102

100+ parts

$0.096

1k+ parts

$0.087

10k+ parts

-

1,532

$0.102

$0.096

$0.087

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,425 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,425

$0.093

-

-

-

Vyrian

USA . 4,213 parts In-Stock

1+ parts

-

100+ parts

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4,213

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 873 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

873

$0.088

-

-

-

Corohmni

South Africa . 196 parts In-Stock

1+ parts

$0.098

100+ parts

-

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-

10k+ parts

-

196

$0.098

-

-

-

Component Stockers USA

USA . 1,650 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

1,650

$0.100

$0.090

$0.080

-

AZTECH Wire

Italy . 198 parts In-Stock

1+ parts

$15.200

100+ parts

-

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198

$15.200

-

-

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Problanco Electronics

Mexico . 7,453 parts In-Stock

1+ parts

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7,453

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TANS Electronics

Latvia . 6,631 parts In-Stock

1+ parts

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6,631

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SupplyDigital Components

Austria . 6,501 parts In-Stock

1+ parts

-

100+ parts

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6,501

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Kulean Microsystems

USA . 4,908 parts In-Stock

1+ parts

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4,908

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Andel Nordic

Denmark . 3,311 parts In-Stock

1+ parts

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3,311

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UHIMA Technologies

Türkiye . 62 parts In-Stock

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62

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Overview

Unleash the power of the MCR100-004 by Onsemi, a top-of-the-line Silicon Controlled Rectifier that delivers unmatched quality and reliability. Manufactured by Onsemi, a leader in the industry, this SCR is perfect for a wide range of applications. With a maximum on-state current of 0.8A and a non-repetitive peak on-state current of 10A, this product offers customers exceptional value and performance. Whether you're looking to control voltage or regulate current, the MCR100-004 is the ultimate solution for all your needs. Elevate your projects with this cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the SCR lightweight and durable, making it suitable for a variety of applications.

Maximum DC Gate Trigger Current: 0.2 mA

With a low DC gate trigger current, this SCR can be activated easily, providing efficient control over power delivery.

Configuration: SINGLE

The single configuration simplifies the installation and operation of the SCR, making it user-friendly for various applications.

Maximum On-state Current: 0.8 A

The maximum on-state current rating of 0.8 A ensures that the SCR can handle moderate power loads reliably without overheating.

Repetitive Peak Reverse Voltage: 200 V

The repetitive peak reverse voltage of 200 V indicates the SCR's capability to withstand reverse voltage spikes, enhancing its overall durability.

Maximum Operating Temperature: 110 °C

With a high maximum operating temperature of 110 °C, this SCR can be used in challenging environments without risk of overheating.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise and reliable switching control, making it ideal for power regulation applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR100-004 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

20 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR100-004 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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