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MC74VHC1G126DT1G

Onsemi

MC74VHC1G126DT1G by Onsemi

MC74VHC1G126DT1G by Onsemi is a 3-STATE bus driver with 10.5ns propagation delay, suitable for military applications. It operates at -55 to 125 °C and supports load capacitance of 50pF. The small outline package has dual terminals and tin finish, making it ideal for surface mount designs.

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AZTECH Wire

Italy . 699 parts In-Stock

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Component Stockers USA

USA . 236 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,681 parts In-Stock

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Microchip USA

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UHIMA Technologies

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Overview

Experience unparalleled quality and reliability with the MC74VHC1G126DT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge Bus Driver & Transceivers that are essential for a wide range of applications. This product offers exceptional value and benefits to customers, with its fast propagation delay, high load capacitance, and 3-state output characteristics. With a maximum operating temperature of 125 °C and military-grade technology, the MC74VHC1G126DT1G is the ideal choice for your electronic needs. Trust Onsemi for superior performance and efficiency in all your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the bus driver, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 10.5 ns

With a low propagation delay, this bus driver can quickly transmit signals, making it efficient for fast communication.

Surface Mount: YES

Being surface mountable allows for easy installation on circuit boards, saving space and reducing assembly time.

Load Capacitance (CL): 50 pF

The low load capacitance ensures efficient signal transmission and minimal signal distortion, making it suitable for high-speed applications.

Power Supplies (V): 2/5.5

The wide range of power supply voltages allows flexibility in different operating conditions, making it versatile for various applications.

No. of Terminals: 5

Having a sufficient number of terminals allows for easy connectivity with other components in a circuit, enhancing the overall functionality of the bus driver.

Maximum I (ol): 8 Amp

The high maximum output current capability ensures reliable and robust performance, making it suitable for driving heavy loads.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this bus driver can withstand harsh environmental conditions, increasing its reliability and durability.

Output Characteristics: 3-STATE

The 3-state output allows for flexibility in signal handling, enabling bidirectional communication and reducing signal contention in multi-driver applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions, making it suitable for a wide range of environments.

Terminal Finish: TIN

The terminal finish of TIN provides good electrical conductivity and solderability, ensuring secure connections and reliable performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this bus driver energy-efficient and reliable in noisy environments.

Technical Specifications

Bus Driver & Transceivers MC74VHC1G126DT1G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE HIGH

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

10.5 ns

Qualification:

Not Qualified

Sub-Category:

Bus Driver/Transceivers

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trade Compliance

MC74VHC1G126DT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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