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MC14066BDT

Onsemi

MC14066BDT by Onsemi

MC14066BDT by Onsemi is a CMOS SPST multiplexer with 4 functions, operating at -55 to 125 °C. It has a supply voltage range of 3-18 V and offers separate outputs with 1050 ohm on-state resistance. This small outline switch is ideal for military-grade applications requiring high isolation and fast switching times.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Farnell

UK . 990 parts In-Stock

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Digiode

USA . 1,734 parts In-Stock

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Vyrian

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PC Components Company LLC

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Bristol Electronics

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Nova Conductors

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Prism Electronics

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Corohmni

South Africa . 287 parts In-Stock

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AZTECH Wire

Italy . 569 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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Argo Parts USA

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Microchip USA

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Corphita

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Continental Prestige Electronics

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UHIMA Technologies

Türkiye . 392 parts In-Stock

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Perfect Parts

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Bastille Electronics

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Overview

Discover the innovative MC14066BDT by Onsemi, a top-of-the-line multiplexer and switch that offers unmatched quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a variety of applications. With its advanced technology and robust design, the MC14066BDT ensures seamless performance and precise functionality. Experience the value and benefits of this exceptional product, designed to exceed expectations and deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable applications.

Surface Mount: YES

The ability for surface mounting makes the installation process easier and more efficient, saving time and effort.

No. of Functions: 4

Having 4 functions in one device increases space efficiency and reduces the need for multiple components.

Nominal Supply Voltage (Vsup): 5 V

Operates at a common voltage level of 5V, making it compatible with a wide range of applications.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, ensuring reliable performance in demanding environments.

Technology: CMOS

Utilizing CMOS technology provides low power consumption, high speed, and compatibility with various digital systems.

Technical Specifications

Multiplexers & Switches MC14066BDT attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NO

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

14

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

25 ohm

Maximum On-state Resistance (Ron):

1050 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

80 ns

Maximum Switch-on Time:

120 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

MC14066BDT Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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