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MC10LVEL40DWR2

Onsemi

MC10LVEL40DWR2 by Onsemi

MC10LVEL40DWR2 by Onsemi is a PLL & Frequency Synthesis Circuit with 20 terminals, operating at -40 to 85 °C. It has a supply voltage range of 3-5V and is surface mountable. Ideal for industrial applications requiring phase detection and frequency synthesis in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,830 parts In-Stock

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Vyrian

USA . 1,101 parts In-Stock

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1,101

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 8,282 parts In-Stock

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SupplyDigital Components

Austria . 8,135 parts In-Stock

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Problanco Electronics

Mexico . 4,118 parts In-Stock

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Corphita

USA . 2,244 parts In-Stock

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TANS Electronics

Latvia . 1,282 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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Overview

Unleash the power of precise frequency synthesis with the MC10LVEL40DWR2 by Onsemi. Crafted with top-quality materials and cutting-edge technology, this Phase Locked Loop (PLL) device offers unparalleled performance and reliability. Perfect for a wide range of applications, from telecommunications to industrial automation, this product guarantees seamless operation in any environment. Experience the value of seamless frequency control and unlock new possibilities with Onsemi's MC10LVEL40DWR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides excellent protection for the internal components of the PLL & Frequency Synthesis Circuit.

Nominal Supply Voltage (Vsup): 3.3 V

Optimal voltage level for stable performance and efficient power consumption.

Maximum Operating Temperature: 85 °C

Can operate reliably in higher temperature environments, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows the PLL & Frequency Synthesis Circuit to function in various environmental conditions.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits MC10LVEL40DWR2 attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Onsemi

Specs

Additional Features:

NECL MODE : VCC = 0V WITH VEE = -3V TO -5.5V

Other IC type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e0

Length:

12.8 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

7.5 mm

Trade Compliance

MC10LVEL40DWR2 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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