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MC10ELT25DR2

Onsemi

MC10ELT25DR2 by Onsemi

MC10ELT25DR2 by Onsemi is a voltage level translator with 5V nominal supply, ECL technology, and 4.1ns max delay. It is used for ECL to TTL translation in industrial applications due to its -40 to 85 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Microfarads

USA . 2,178 parts In-Stock

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Vyrian

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Prism Electronics

USA . 1,060 parts In-Stock

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Digiode

USA . 839 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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Resion

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SupplyDigital Components

Austria . 8,169 parts In-Stock

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TANS Electronics

Latvia . 6,867 parts In-Stock

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Problanco Electronics

Mexico . 5,476 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Overview

Discover the MC10ELT25DR2 by Onsemi, a top-notch voltage level translator that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for their high-quality products, this voltage translator is perfect for a wide range of applications. With its advanced technology and industrial-grade construction, it offers customers unparalleled value and benefits. Say goodbye to compatibility issues and hello to seamless communication with the MC10ELT25DR2. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this voltage level translator can handle a wide range of input signal levels and is compatible with various systems.

Output Polarity: TRUE

Having true output polarity ensures accurate signal translation and compatibility between different voltage levels in a system.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for reliable performance in harsh industrial environments without risk of overheating.

Technical Specifications

Voltage Level Translators MC10ELT25DR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

4.1 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Nominal Negative Supply Voltage:

-5 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC10ELT25DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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