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MBRB3030CTLG

Onsemi

MBRB3030CTLG by Onsemi

MBRB3030CTLG by Onsemi is a Schottky rectifier diode with 30V reverse voltage and 15A output current. It has a common cathode configuration, matte tin terminal finish, and operates b/w -55 °C to 125°C. Ideal for power applications, this diode is surface mountable in a small outline package shape.

Median Price

$1.870

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$1.870

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-

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1

$1.870

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Arrow

USA . 1 parts In-Stock

1+ parts

$2.212

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1

$2.212

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DigiKey

USA . 4 parts In-Stock

1+ parts

$4.160

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4

$4.160

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Rochester

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$1.280

1k+ parts

$1.150

10k+ parts

$1.080

480

-

$1.280

$1.150

$1.080

Verical

USA . 450 parts In-Stock

1+ parts

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$1.438

10k+ parts

$1.350

450

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$1.438

$1.350

Distributors (In-Stock)

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Digiode

USA . 1,565 parts In-Stock

1+ parts

$1.425

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1,565

$1.425

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Chip Stock

USA . 7,463 parts In-Stock

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7,463

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Vyrian

USA . 6,332 parts In-Stock

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6,332

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ComSIT Distribution GmbH

Germany . 1,966 parts In-Stock

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1,966

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ComSIT USA

USA . 1,966 parts In-Stock

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1,966

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Prism Electronics

USA . 39 parts In-Stock

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39

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LWI Electronics Inc

India . 27 parts In-Stock

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27

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.151

100+ parts

$0.137

1k+ parts

$0.124

10k+ parts

-

100

$0.151

$0.137

$0.124

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Corphita

USA . 2,208 parts In-Stock

1+ parts

$1.350

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2,208

$1.350

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Corohmni

South Africa . 97 parts In-Stock

1+ parts

$1.500

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97

$1.500

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Microchip USA

USA . 464 parts In-Stock

1+ parts

$13.838

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464

$13.838

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SupplyDigital Components

Austria . 6,837 parts In-Stock

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6,837

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TANS Electronics

Latvia . 6,548 parts In-Stock

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6,548

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Kulean Microsystems

USA . 4,620 parts In-Stock

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4,620

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Kepictronics

USA . 3,700 parts In-Stock

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3,700

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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ChipstoGo Electronic ltd

UK . 1,496 parts In-Stock

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1,496

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Problanco Electronics

Mexico . 1,307 parts In-Stock

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1,307

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RC Electronics

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 766 parts In-Stock

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766

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Perfect Parts

USA . 253 parts In-Stock

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253

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Overview

Unlock the power of innovative technology with the MBRB3030CTLG by Onsemi. Designed with precision and expertise, this diode offers unmatched quality and reliability for a wide range of power applications. With its common cathode configuration and Schottky technology, this product delivers superior performance and efficiency. Whether you're looking to enhance your power supplies or optimize your circuits, the MBRB3030CTLG is the perfect solution for all your needs. Experience the difference with Onsemi and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diodes, ensuring durability and reliability.

No. of Terminals: 2

Simple two-terminal design makes it easy to install and connect in circuits.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for power applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed to convert AC to DC, making this product ideal for power applications.

Technology: SCHOTTKY

Schottky diodes have a lower forward voltage drop and faster switching compared to standard diodes, making this product more efficient.

Technical Specifications

Diodes & Rectifiers MBRB3030CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.44 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB3030CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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