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MBRA120ET3

Onsemi

MBRA120ET3 by Onsemi

MBRA120ET3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates at a max temperature of 150 °C, making it suitable for applications requiring high-speed switching in compact electronic devices. The diode's small outline package and surface mount capability make it ideal for space-constrained PCB designs.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 4,298 parts In-Stock

1+ parts

$0.600

100+ parts

$0.300

1k+ parts

$0.120

10k+ parts

$0.090

4,298

$0.600

$0.300

$0.120

$0.090

Chip Stock

USA . 93,400 parts In-Stock

1+ parts

-

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93,400

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Vyrian

USA . 13,230 parts In-Stock

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13,230

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LIBRA Elektronik GmbH

Germany . 4,700 parts In-Stock

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4,700

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ACDS - Activité Composants Distribution Service

France . 4,298 parts In-Stock

1+ parts

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4,298

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Dan-Mar Components

USA . 4,298 parts In-Stock

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4,298

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Semtec, LLC

USA . 967 parts In-Stock

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967

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Digiode

USA . 862 parts In-Stock

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862

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Mil-Aero Solutions, Inc.

USA . 100 parts In-Stock

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100

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Prism Electronics

USA . 75 parts In-Stock

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75

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.066

100+ parts

$0.060

1k+ parts

$0.054

10k+ parts

-

60

$0.066

$0.060

$0.054

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AZTECH Wire

Italy . 850 parts In-Stock

1+ parts

$14.480

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850

$14.480

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Component Stockers USA

USA . 206 parts In-Stock

1+ parts

$99.990

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206

$99.990

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Kepictronics

USA . 40,000 parts In-Stock

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Problanco Electronics

Mexico . 5,581 parts In-Stock

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5,581

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Kulean Microsystems

USA . 3,090 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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SupplyDigital Components

Austria . 2,070 parts In-Stock

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2,070

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Corphita

USA . 2,014 parts In-Stock

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2,014

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TANS Electronics

Latvia . 1,918 parts In-Stock

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1,918

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S.R.D Solutions

India . 1,500 parts In-Stock

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Corohmni

South Africa . 263 parts In-Stock

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263

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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95

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Perfect Parts

USA . 84 parts In-Stock

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84

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Overview

Elevate your electronic projects with the MBRA120ET3 by Onsemi, a high-quality Schottky rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications in the Diodes & Rectifiers category. With its small outline package style and dual terminals, it's easy to install and use. Experience the benefits of its low forward voltage, high output current, and superior technology. Trust Onsemi to deliver top-notch products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplifies circuit design and installation.

Surface Mount: YES

Enables easy and secure mounting on circuit boards.

Package Shape: RECTANGULAR

Facilitates space-efficient placement on circuit boards.

No. of Terminals: 2

Simplifies connectivity in the circuit.

Package Style (Meter): SMALL OUTLINE

Contributes to a compact and efficient design.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even under high-temperature conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good electrical conductivity and solderability.

Terminal Position: DUAL

Facilitates proper connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Indicates the time duration the diode can withstand at peak reflow temperature, ensuring reliability during soldering.

Peak Reflow Temperature °C: 235

Specifies the maximum temperature for soldering, ensuring proper installation.

Diode Type: RECTIFIER DIODE

Suitable for converting AC to DC with minimal voltage drop.

Maximum Forward Voltage (VF): 0.36 V

Indicates low forward voltage drop, leading to energy efficiency.

Maximum Output Current: 1 A

Can handle moderate current levels, suitable for many applications.

Technology: SCHOTTKY

Offers fast switching speed and low power loss.

Terminal Form: C BEND

Facilitates easy soldering and connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 20 V

Can withstand reverse voltage without breakdown.

Maximum Non Repetitive Peak Forward Current: 40 A

Can handle high current surges without damage.

Diode Element Material: SILICON

Provides good electrical properties and reliability.

Technical Specifications

Diodes & Rectifiers MBRA120ET3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRA120ET3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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