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MBR440MFST3G

Onsemi

MBR440MFST3G by Onsemi

MBR440MFST3G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage and 4A max output current. It operates b/w -55 to 175 °C, ideal for efficiency applications. This single-configured diode has a small outline package with matte tin terminal finish for surface mount assembly.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,182 parts In-Stock

1+ parts

$0.890

100+ parts

$0.361

1k+ parts

$0.250

10k+ parts

$0.227

2,182

$0.890

$0.361

$0.250

$0.227

Flip Electronics (Authorized)

USA . 15,010 parts In-Stock

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Rochester

USA . 9,560 parts In-Stock

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$0.244

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$0.203

10k+ parts

$0.181

9,560

-

$0.244

$0.203

$0.181

Verical

USA . 5,000 parts In-Stock

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$0.226

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$0.226

Distributors (In-Stock)

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Vyrian

USA . 1,781 parts In-Stock

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$0.164

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1,781

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Digiode

USA . 1,852 parts In-Stock

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$0.190

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1,852

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Flip Electronics

USA . 15,010 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8,575 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.126

100+ parts

$0.115

1k+ parts

$0.103

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-

1,000

$0.126

$0.115

$0.103

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Corohmni

South Africa . 156 parts In-Stock

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$0.164

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Corphita

USA . 396 parts In-Stock

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$0.180

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396

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Component Stockers USA

USA . 7,204 parts In-Stock

1+ parts

$0.210

100+ parts

$0.190

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$0.180

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7,204

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SupplyDigital Components

Austria . 5,115 parts In-Stock

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

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$0.164

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TANS Electronics

Latvia . 3,034 parts In-Stock

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Kulean Microsystems

USA . 2,560 parts In-Stock

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2,560

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Problanco Electronics

Mexico . 606 parts In-Stock

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UHIMA Technologies

Türkiye . 331 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the MBR440MFST3G diode rectifier. This high-performance component is perfect for applications requiring efficiency and precision. With a maximum output current of 4A and a peak repetitive reverse voltage of 40V, this Schottky diode offers unparalleled performance. Trust Onsemi to deliver top-notch products that will exceed your expectations. Unlock the potential of your projects with the MBR440MFST3G diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Easy to mount on circuit boards, saving space and enabling efficient manufacturing processes.

Maximum Reverse Current: 800 uA

Low reverse current helps in minimizing power loss and improving overall efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on the board, enhancing manufacturing efficiency.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBR440MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

800 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR440MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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