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LV59012M-TLM-H

Onsemi

LV59012M-TLM-H by Onsemi

LV59012M-TLM-H by Onsemi is a Power Management IC with 3V supply voltage, 8 terminals, and max operating temp of 85 °C. Ideal for applications requiring small outline package style, surface mount technology, and low supply current of 0.16mA.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Vyrian

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QUARKTWIN TECHNOLOGY LTD

USA . 13,357 parts In-Stock

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TANS Electronics

Latvia . 7,255 parts In-Stock

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Microchip USA

USA . 6,768 parts In-Stock

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SupplyDigital Components

Austria . 5,701 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,289 parts In-Stock

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Kepictronics

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Corohmni

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UHIMA Technologies

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Corphita

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Overview

Unlock the potential of your power management needs with the LV59012M-TLM-H by Onsemi. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides efficient power solutions that guarantee optimal performance. Say goodbye to technical headaches and hello to seamless power management with Onsemi's innovative LV59012M-TLM-H. Elevate your projects and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, ensuring durability and reliability.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing overall product size.

Nominal Supply Voltage (Vsup): 3 V

Operates at a common and efficient voltage level, suitable for a wide range of applications.

Maximum Operating Temperature: 85 °C

Capable of operating in high temperature environments, ensuring stable performance under various conditions.

Technology: BICMOS

Utilizes BiCMOS technology for improved power efficiency and performance, making it a reliable choice for power management.

Technical Specifications

Power Management ICs LV59012M-TLM-H attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.16 mA

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

LV59012M-TLM-H Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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