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LV59001M

Onsemi

LV59001M by Onsemi

LV59001M by Onsemi is a Power Management IC with 3V nominal voltage. It features 8 terminals, BICMOS technology, and operates b/w -30 to 85 °C. Ideal for applications requiring small outline packages and surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 324 parts In-Stock

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Digiode

USA . 188 parts In-Stock

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TANS Electronics

Latvia . 7,945 parts In-Stock

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Problanco Electronics

Mexico . 5,791 parts In-Stock

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SupplyDigital Components

Austria . 5,417 parts In-Stock

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Kulean Microsystems

USA . 3,825 parts In-Stock

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Corphita

USA . 1,274 parts In-Stock

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Corohmni

South Africa . 477 parts In-Stock

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UHIMA Technologies

Türkiye . 391 parts In-Stock

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Overview

Upgrade your power management solutions with the LV59001M by Onsemi. Designed with high-quality materials and cutting-edge technology, this Power Management IC offers unmatched reliability and efficiency. Ideal for a wide range of applications, this product is a must-have for electronics enthusiasts looking to maximize performance and minimize downtime. Trust Onsemi's expertise in power management ICs and experience the difference with the LV59001M.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is lightweight and cost-effective, making the product easy to handle and affordable.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation onto circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 3 V

Operates at a low nominal supply voltage, making it suitable for low power applications and reducing energy consumption.

Maximum Operating Temperature: 85 °C

Can operate at high temperatures without degradation, ensuring reliable performance in various environmental conditions.

Minimum Operating Temperature: -30 °C

Can operate at low temperatures without issues, making it suitable for use in a wide range of environments.

Technology: BICMOS

Utilizes BICMOS technology, combining the advantages of both bipolar and CMOS technologies for optimized performance and efficiency.

Technical Specifications

Power Management ICs LV59001M attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

LV59001M Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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