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LV59018M

Onsemi

LV59018M by Onsemi

LV59018M by Onsemi is a Power Management IC with 3V supply voltage, 8 terminals, and BICMOS technology. It operates b/w -30 °C to 85°C and has a max supply current of 0.16mA. This rectangular package is surface mountable and commonly used in various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 163 parts In-Stock

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Digiode

USA . 56 parts In-Stock

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Kulean Microsystems

USA . 6,716 parts In-Stock

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Problanco Electronics

Mexico . 4,221 parts In-Stock

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TANS Electronics

Latvia . 3,046 parts In-Stock

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SupplyDigital Components

Austria . 2,936 parts In-Stock

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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Corphita

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Overview

Discover the power of the LV59018M from Onsemi, a leading manufacturer in Power Management ICs. This versatile product offers reliable performance and efficient power management solutions for a wide range of applications. With its small outline package style and dual terminal position, this IC provides ease of use and flexibility in design. From automotive to industrial, the LV59018M is the perfect choice for customers seeking high-quality components that deliver value, benefits, and unmatched advantages. Trust Onsemi for your power management needs and experience excellence in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Nominal Supply Voltage (Vsup): 3 V

Operating at 3V nominal supply voltage offers compatibility with a wide range of devices.

Package Style: SMALL OUTLINE

Small outline package style saves space and is well-suited for compact designs.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Technology: BICMOS

BICMOS technology combines the advantages of bipolar and CMOS technologies for improved performance and efficiency.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and enhances connectivity.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27mm allows for precise and reliable connections to the circuit board.

Technical Specifications

Power Management ICs LV59018M attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.16 mA

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

LV59018M Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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