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LC05111C23MTTTG

Onsemi

LC05111C23MTTTG by Onsemi

LC05111C23MTTTG by Onsemi is a Power Management IC with a supply voltage range of 2.6V to 4.3V, suitable for industrial applications. It features a small outline package with dual terminals and operates b/w -40 °C to 85°C. This CMOS technology IC has a max seated height of 0.8mm and low supply current of 0.006mA, making it ideal for power supply support circuits in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,678 parts In-Stock

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Digiode

USA . 2,359 parts In-Stock

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2,359

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AZTECH Wire

Italy . 543 parts In-Stock

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$22.210

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543

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SupplyDigital Components

Austria . 7,470 parts In-Stock

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TANS Electronics

Latvia . 7,298 parts In-Stock

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Kulean Microsystems

USA . 5,962 parts In-Stock

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Problanco Electronics

Mexico . 969 parts In-Stock

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UHIMA Technologies

Türkiye . 626 parts In-Stock

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Microchip USA

USA . 257 parts In-Stock

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Corohmni

South Africa . 173 parts In-Stock

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Corphita

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Overview

Enhance your power management solutions with the LC05111C23MTTTG by Onsemi. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for industrial applications, this small outline, heat sink profile package provides efficient power supply support circuitry. With a wide operating temperature range and dual terminals, customers can trust in the durability and performance of this product. Experience the value and benefits of seamless power management with the LC05111C23MTTTG by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and resistance to environmental factors, making this product suitable for various applications.

Surface Mount: YES

Surface mount design allows for easy PCB assembly and saves space, making it efficient for compact electronic devices.

Nominal Supply Voltage (Vsup): 3.7 V

The 3.7V nominal supply voltage is compatible with many electronic devices, ensuring proper power management and efficient operation.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can withstand elevated temperatures, making it suitable for industrial use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this Power Management IC energy-efficient and reliable.

Technical Specifications

Power Management ICs LC05111C23MTTTG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e6

Length:

3.8 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.16,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current (Isup):

.006 mA

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

2.6 V

Nominal Supply Voltage (Vsup):

3.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2.6 mm

Trade Compliance

LC05111C23MTTTG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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