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LC05111C04MTTTG

Onsemi

LC05111C04MTTTG by Onsemi

LC05111C04MTTTG by Onsemi is a Power Management IC with Vsup of 3.7V, suitable for industrial applications. It features a small outline package style, dual terminal position, and operates b/w -40 to 85 °C. This CMOS technology IC has a max supply current of 0.006mA and is surface mountable.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,480 parts In-Stock

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Digiode

USA . 1,170 parts In-Stock

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1,170

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Kulean Microsystems

USA . 8,305 parts In-Stock

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SupplyDigital Components

Austria . 8,212 parts In-Stock

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Problanco Electronics

Mexico . 6,194 parts In-Stock

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Corphita

USA . 1,355 parts In-Stock

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TANS Electronics

Latvia . 1,191 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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UHIMA Technologies

Türkiye . 229 parts In-Stock

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Overview

Power up your devices with the LC05111C04MTTTG from Onsemi, a leading manufacturer in power management ICs. This small outline, heat sink package offers industrial-grade performance with a very thin profile, making it ideal for a wide range of applications. With a nominal supply voltage of 3.7V and dual terminals, this power supply support circuit provides reliable and efficient power management for your electronic devices. Trust Onsemi for quality products that deliver superior performance and unmatched value to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the Power Management IC, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes it easier to integrate the Power Management IC into circuit boards, saving space and allowing for efficient assembly.

Nominal Supply Voltage (Vsup): 3.7 V

The 3.7V supply voltage is commonly used in many electronic devices, making this Power Management IC compatible with a wide range of applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this Power Management IC can withstand high temperatures, making it suitable for industrial environments.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making this Power Management IC efficient and reliable.

Technical Specifications

Power Management ICs LC05111C04MTTTG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-N6

Length:

3.8 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.16,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.006 mA

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

2.6 V

Nominal Supply Voltage (Vsup):

3.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

2.6 mm

Trade Compliance

LC05111C04MTTTG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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