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KSP13

Onsemi

KSP13 by Onsemi

The Onsemi KSP13 is a NPN Darlington BJT with hFE of 10k, Vce of 30V, and fT of 125MHz. Ideal for amplification in low-power applications due to its high gain and current capabilities. Package style is cylindrical with through-hole terminals for easy mounting.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,799 parts In-Stock

1+ parts

$0.400

100+ parts

$0.173

1k+ parts

$0.102

10k+ parts

$0.060

1,799

$0.400

$0.173

$0.102

$0.060

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,055 parts In-Stock

1+ parts

$0.352

100+ parts

-

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2,055

$0.352

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Vyrian

USA . 2,321 parts In-Stock

1+ parts

$0.370

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2,321

$0.370

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Chip Stock

USA . 185,700 parts In-Stock

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185,700

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A2Z Electronics, Inc.

USA . 6,060 parts In-Stock

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6,060

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Fibra_Brandt Electronic GMBH

Germany . 180 parts In-Stock

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180

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Distributors (Availability)

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Corphita

USA . 626 parts In-Stock

1+ parts

$0.333

100+ parts

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626

$0.333

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Corohmni

South Africa . 283 parts In-Stock

1+ parts

$0.370

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283

$0.370

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Perfect Parts

USA . 16,800 parts In-Stock

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16,800

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Problanco Electronics

Mexico . 7,784 parts In-Stock

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7,784

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TANS Electronics

Latvia . 6,579 parts In-Stock

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6,579

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Kepictronics

USA . 5,500 parts In-Stock

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5,500

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Kulean Microsystems

USA . 4,074 parts In-Stock

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4,074

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S.R.D Solutions

India . 3,000 parts In-Stock

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Supply Digital

USA . 2,022 parts In-Stock

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2,022

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 816 parts In-Stock

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816

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Assy Fe

Spain . 132 parts In-Stock

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132

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SupplyDigital Components

Austria . 1 parts In-Stock

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1

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Overview

Light up your projects with the KSP13 by Onsemi! This high-quality Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and reliability, thanks to Onsemi's renowned manufacturing expertise. Ideal for a wide range of applications, from amplifiers to switching circuits, this NPN Darlington transistor provides excellent value and benefits to customers. Trust in the KSP13 to deliver superior results and unlock endless possibilities for your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material allows for easy handling and protection of the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, offering reliable performance and versatility.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and low saturation voltage, making this transistor suitable for driving large loads efficiently.

Package Shape: ROUND

The round shape allows for easy mounting and fitting in compact spaces, ideal for applications where space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ensuring reliable performance and ease of soldering during assembly.

Minimum DC Current Gain (hFE): 10000

With a high minimum DC current gain, this transistor offers excellent amplification capabilities and signal processing efficiency.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage rating of 30V ensures safe operation within specified voltage limits, protecting the transistor from potential damage.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate power loads and is suitable for low to medium power applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low noise, and stable performance over a wide temperature range, making them ideal for various electronic circuits.

Terminal Position: BOTTOM

The terminal position at the bottom provides easy access for soldering and connections, ensuring convenient installation in circuit boards or designs.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency of 125MHz allows for fast switching speeds and high-frequency operation, making this transistor suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSP13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSP13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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