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KSP14

Onsemi

KSP14 by Onsemi

The Onsemi KSP14 is a NPN Darlington BJT with hFE of 20k, VCE of 30V, and fT of 125MHz. Ideal for low-power applications requiring high current gain and voltage capabilities in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,394 parts In-Stock

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Vyrian

USA . 971 parts In-Stock

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Kulean Microsystems

USA . 7,272 parts In-Stock

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SupplyDigital Components

Austria . 6,315 parts In-Stock

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Problanco Electronics

Mexico . 6,170 parts In-Stock

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Corphita

USA . 2,696 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,648 parts In-Stock

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UHIMA Technologies

Türkiye . 946 parts In-Stock

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Corohmni

South Africa . 405 parts In-Stock

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TANS Electronics

Latvia . 143 parts In-Stock

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Overview

Enhance your electronic projects with the KSP14 from Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers high-quality performance in a compact package. Ideal for amplification and switching applications, this NPN transistor boasts a minimum DC current gain of 20,000 and a maximum collector-emitter voltage of 30V. Trust in Onsemi's reputation for excellence and trust the KSP14 to deliver reliability and efficiency. Upgrade your designs today with the KSP14 and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting in various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and reliability.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for increased sensitivity in applications requiring high amplification.

Package Shape: ROUND

Round package shape is compact and allows for easy mounting on PCBs, saving space and providing efficient integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure secure and reliable connections, making installation and soldering easier for users.

No. of Terminals: 3

Three terminals simplify circuit design and make connections straightforward, enhancing ease of use for the product.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is visually appealing and can be easily integrated into various designs, enhancing the overall aesthetic of the product.

Minimum DC Current Gain (hFE): 20000

High minimum DC current gain ensures stable and consistent amplification, making this transistor reliable for various applications.

Maximum Collector-Emitter Voltage: 30 V

With a high maximum collector-emitter voltage, this transistor can handle a wide range of voltages, increasing its versatility in different circuits.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high efficiency and reliability, ensuring optimal performance of the transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels, making it suitable for a variety of low to medium power applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure PCB mounting, ensuring stable connections and efficient performance of the transistor.

Nominal Transition Frequency (fT): 125 MHz

High nominal transition frequency allows for fast switching and amplification, making this transistor ideal for high-frequency applications that require quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSP14 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSP14 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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