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FSB560AD87Z

Onsemi

FSB560AD87Z by Onsemi

Onsemi's FSB560AD87Z is a NPN BJT with hFE of 250, VCE of 60V, and IC of 2A. Ideal for small signal applications in electronics due to its high transition frequency of 75MHz and operating temperature up to 150 °C. This Gull Wing terminal transistor comes in a small outline package suitable for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,762 parts In-Stock

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Digiode

USA . 1,522 parts In-Stock

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Native Components

USA . 670 parts In-Stock

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$0.060

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$0.058

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$0.058

Kulean Microsystems

USA . 7,001 parts In-Stock

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Problanco Electronics

Mexico . 5,278 parts In-Stock

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SupplyDigital Components

Austria . 2,552 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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Corphita

USA . 315 parts In-Stock

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Corohmni

South Africa . 251 parts In-Stock

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TANS Electronics

Latvia . 121 parts In-Stock

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Northwest PG Solutions

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Overview

Upgrade your electronic devices with the FSB560AD87Z from Onsemi, a leading manufacturer in the industry. This small signal bipolar junction transistor offers high-quality performance and reliability for various applications. With its NPN configuration and maximum collector-emitter voltage of 60V, this transistor is perfect for amplification tasks. Its small outline package and gull wing terminals make it easy to integrate into your designs, while the minimum DC current gain of 250 ensures efficient operation. Trust Onsemi for top-notch components that deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and durability, ensuring the transistor is protected from external environmental factors.

Polarity or Channel Type: NPN

NPN transistor allows for easy integration with other NPN components in a circuit, making it versatile for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and offers ease of use for applications requiring a single transistor.

Surface Mount: YES

Surface mount capability allows for easy placement and soldering onto PCBs, making installation and assembly convenient.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint, ideal for space-constrained designs and applications.

Terminal Form: GULL WING

Gull wing terminals offer secure connections and ease of soldering, ensuring reliable electrical contact in the circuit.

No. of Terminals: 3

3 terminals provide necessary connections for proper functioning in a circuit while keeping the design simple and efficient.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, enabling compact designs and efficient use of board real estate.

Minimum DC Current Gain (hFE): 250

High minimum DC current gain ensures reliable and consistent amplification of signals, making the transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures reliability under various environmental conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating allows for handling higher voltage levels, providing versatility for different voltage requirements.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics, such as high conductivity and thermal stability, ensuring reliable operation.

Maximum Collector Current (IC): 2 A

High maximum collector current rating allows for handling higher current levels, suitable for applications requiring higher power dissipation.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connection options, enabling customized designs for specific requirements.

Nominal Transition Frequency (fT): 75 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation, making the transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FSB560AD87Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FSB560AD87Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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