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FSB560

Onsemi

FSB560 by Onsemi

FSB560 by Onsemi is a NPN BJT with 3 terminals, 100 min hFE, and 60V max collector-emitter voltage. It is used in small outline packages for applications requiring high transition frequency up to 75MHz.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,915 parts In-Stock

1+ parts

$0.750

100+ parts

$0.299

1k+ parts

$0.205

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$0.153

3,915

$0.750

$0.299

$0.205

$0.153

Rochester

USA . 30,116 parts In-Stock

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-

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$0.181

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$0.150

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$0.134

30,116

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$0.181

$0.150

$0.134

Mouser Electronics

USA . 8,592 parts In-Stock

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$0.140

8,592

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$0.140

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Verical

USA . 1,380 parts In-Stock

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Farnell

UK . 639 parts In-Stock

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$0.254

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$0.194

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639

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$0.254

$0.194

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Element14

Singapore . 639 parts In-Stock

1+ parts

-

100+ parts

$0.433

1k+ parts

$0.315

10k+ parts

$0.250

639

-

$0.433

$0.315

$0.250

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,973 parts In-Stock

1+ parts

$0.142

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2,973

$0.142

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Nova Conductors

Japan . 600 parts In-Stock

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$0.189

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600

$0.189

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Demsay Elektronik

Türkiye . 21,371 parts In-Stock

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21,371

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Vyrian

USA . 7,372 parts In-Stock

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7,372

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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ComSIT USA

USA . 6,000 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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R&J Components

USA . 2,965 parts In-Stock

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2,965

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Distributors (Availability)

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Semicontronic

India . 6,426 parts In-Stock

1+ parts

$0.119

100+ parts

$0.116

1k+ parts

$0.115

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-

6,426

$0.119

$0.116

$0.115

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Corphita

USA . 609 parts In-Stock

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$0.134

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609

$0.134

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Corohmni

South Africa . 281 parts In-Stock

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$0.140

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281

$0.140

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Component Stockers USA

USA . 38,741 parts In-Stock

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$0.150

100+ parts

$0.140

1k+ parts

$0.130

10k+ parts

$0.130

38,741

$0.150

$0.140

$0.130

$0.130

Argo Parts USA

USA . 2,628 parts In-Stock

1+ parts

$0.189

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$0.184

2,628

$0.189

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$0.184

Ampacity Inc.

Singapore . 7,331 parts In-Stock

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$0.259

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7,331

$0.259

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Aztec Data Supply Inc.

USA . 1,135 parts In-Stock

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$0.589

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1,135

$0.589

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Continental Prestige Electronics

USA . 37,166 parts In-Stock

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$0.190

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Kulean Microsystems

USA . 6,368 parts In-Stock

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Perfect Parts

USA . 6,162 parts In-Stock

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TANS Electronics

Latvia . 4,339 parts In-Stock

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Problanco Electronics

Mexico . 4,197 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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SupplyDigital Components

Austria . 2,216 parts In-Stock

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Supply Digital

USA . 1,576 parts In-Stock

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UHIMA Technologies

Türkiye . 322 parts In-Stock

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322

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Overview

Looking to enhance your electronic projects with a high-quality small signal bipolar junction transistor? Look no further than the FSB560 by Onsemi. With Onsemi's reputation for reliable and durable components, this NPN transistor offers a single configuration in a compact rectangular package, making it perfect for various applications. Benefit from its maximum power dissipation of 0.5W, minimum DC current gain of 100, and maximum collector-emitter voltage of 60V. Trust the FSB560 to deliver superior performance and efficiency for all your circuit design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good electrical insulation and thermal conductivity, ensuring durability and efficient operation of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for various signal amplification applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic devices.

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, making this transistor ideal for small electronic devices.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 W, this transistor can handle moderate power levels efficiently without overheating.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures amplification of input signals with high fidelity and consistency.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60 V provides a wide operating range for voltage-sensitive applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate current levels, making it suitable for diverse electronic circuits.

Nominal Transition Frequency (fT): 75 MHz

A high nominal transition frequency of 75 MHz indicates that this transistor can operate at high frequencies, making it ideal for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FSB560 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FSB560 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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