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FDWS86068-F085

Onsemi

FDWS86068-F085 by Onsemi

FDWS86068-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 80A Drain Current. Ideal for applications requiring high power dissipation up to 214W, such as automotive electronics due to AEC-Q101 standard compliance.

Median Price

$1.590

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,867 parts In-Stock

1+ parts

-

100+ parts

$1.590

1k+ parts

$1.420

10k+ parts

$1.340

6,867

-

$1.590

$1.420

$1.340

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,639 parts In-Stock

1+ parts

$1.682

100+ parts

-

1k+ parts

-

10k+ parts

-

1,639

$1.682

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.970

100+ parts

-

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-

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-

50

$1.970

-

-

-

Component Sense

UK . 301,635 parts In-Stock

1+ parts

-

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-

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301,635

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-

-

-

Chip Stock

USA . 10,900 parts In-Stock

1+ parts

-

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10,900

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Vyrian

USA . 2,920 parts In-Stock

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2,920

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,249 parts In-Stock

1+ parts

$1.320

100+ parts

-

1k+ parts

-

10k+ parts

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4,249

$1.320

-

-

-

Ampacity Inc.

Singapore . 3,210 parts In-Stock

1+ parts

$1.390

100+ parts

-

1k+ parts

-

10k+ parts

-

3,210

$1.390

-

-

-

Semicontronic

India . 3,162 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

1k+ parts

$1.455

10k+ parts

-

3,162

$1.500

$1.462

$1.455

-

Corphita

USA . 1,953 parts In-Stock

1+ parts

$1.593

100+ parts

-

1k+ parts

-

10k+ parts

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1,953

$1.593

-

-

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Corohmni

South Africa . 360 parts In-Stock

1+ parts

$1.630

100+ parts

-

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-

10k+ parts

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360

$1.630

-

-

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Modulus Dynamics

Lithuania . 16,479 parts In-Stock

1+ parts

$1.661

100+ parts

$1.661

1k+ parts

$1.661

10k+ parts

-

16,479

$1.661

$1.661

$1.661

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$1.931

100+ parts

-

1k+ parts

$1.853

10k+ parts

-

500

$1.931

-

$1.853

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Argo Parts USA

USA . 3,444 parts In-Stock

1+ parts

$1.970

100+ parts

-

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-

10k+ parts

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3,444

$1.970

-

-

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Continental Prestige Electronics

USA . 394 parts In-Stock

1+ parts

$1.970

100+ parts

-

1k+ parts

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10k+ parts

$1.931

394

$1.970

-

-

$1.931

Microchip USA

USA . 4,029 parts In-Stock

1+ parts

$11.653

100+ parts

-

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4,029

$11.653

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Lixinc

USA . 14,384 parts In-Stock

1+ parts

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14,384

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Problanco Electronics

Mexico . 8,085 parts In-Stock

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8,085

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TANS Electronics

Latvia . 5,406 parts In-Stock

1+ parts

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5,406

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Futuretech Components

Singapore . 4,847 parts In-Stock

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4,847

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SupplyDigital Components

Austria . 3,133 parts In-Stock

1+ parts

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3,133

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Kulean Microsystems

USA . 878 parts In-Stock

1+ parts

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878

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UHIMA Technologies

Türkiye . 870 parts In-Stock

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870

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Overview

Unleash the power of innovation with the FDWS86068-F085 by Onsemi. As a leading manufacturer in power field effect transistors, Onsemi delivers exceptional quality and reliability. This N-channel transistor features a single configuration with a built-in diode, making it ideal for various applications. With a maximum drain current of 80A and a minimum DS breakdown voltage of 100V, this transistor offers unmatched performance and efficiency. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Experience the difference with the FDWS86068-F085 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides strong protection and reliability for the transistor

Polarity or Channel Type: N-CHANNEL

Suitable for various circuit designs and applications

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with the built-in diode

Minimum DS Breakdown Voltage: 100 V

Can handle high voltages, making it versatile for different power requirements

Surface Mount: YES

Easy to integrate onto circuit boards

Maximum Drain Current (Abs) (ID): 80 A

Ability to handle high currents for demanding applications

Maximum Power Dissipation (Abs): 214 W

High power dissipation capability for efficient performance

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments

Maximum Turn On Time (ton): 30 ns

Fast turn-on time for quick response in circuits

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes

Technical Specifications

Power Field Effect Transistors (FET) FDWS86068-F085 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

36 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

80 A

Maximum Drain Current (ID):

80 A

Maximum Drain-Source On Resistance:

.0064 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

19 pF

JEDEC-95 Code:

MO-240AA

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

214 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

48 ns

Maximum Turn On Time (ton):

30 ns

Trade Compliance

FDWS86068-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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