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FDPC8012S

Onsemi

FDPC8012S by Onsemi

FDPC8012S by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage and 88A max drain current. It is used for switching applications, featuring a series connected, center tap configuration with built-in diode. This small outline transistor operates in enhancement mode at up to 150°C, making it suitable for high-power circuit designs.

Median Price

$0.676

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,928 parts In-Stock

1+ parts

$2.030

100+ parts

$0.872

1k+ parts

$0.633

10k+ parts

$0.566

1,928

$2.030

$0.872

$0.633

$0.566

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$2.340

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4

$2.340

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Rochester

USA . 111,973 parts In-Stock

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$0.664

1k+ parts

$0.551

10k+ parts

$0.491

111,973

-

$0.664

$0.551

$0.491

Verical

USA . 87,185 parts In-Stock

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$0.689

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$0.614

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$0.689

$0.614

Flip Electronics (Authorized)

USA . 29,956 parts In-Stock

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DigiKey

USA . 9,898 parts In-Stock

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$0.489

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Arrow

USA . 3,000 parts In-Stock

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$0.489

3,000

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$0.489

Distributors (In-Stock)

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Digiode

USA . 2,186 parts In-Stock

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$0.795

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$0.795

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Vyrian

USA . 981 parts In-Stock

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$0.837

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981

$0.837

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Bristol Electronics

USA . 21,127 parts In-Stock

1+ parts

$1.200

100+ parts

$0.444

1k+ parts

$0.312

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21,127

$1.200

$0.444

$0.312

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Dan-Mar Components

USA . 30,127 parts In-Stock

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Flip Electronics

USA . 29,956 parts In-Stock

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Chip Stock

USA . 16,000 parts In-Stock

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Microfarads

USA . 5,670 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 132,944 parts In-Stock

1+ parts

$0.390

100+ parts

$1.730

1k+ parts

$1.560

10k+ parts

$1.560

132,944

$0.390

$1.730

$1.560

$1.560

Corphita

USA . 1,789 parts In-Stock

1+ parts

$0.753

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1,789

$0.753

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Corohmni

South Africa . 67 parts In-Stock

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$0.837

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67

$0.837

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Native Components

USA . 261 parts In-Stock

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$5.950

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261

$5.950

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Continental Prestige Electronics

USA . 71,700 parts In-Stock

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$2.150

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$2.150

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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Perfect Parts

USA . 48,260 parts In-Stock

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RC Electronics

USA . 21,000 parts In-Stock

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$3.900

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$3.670

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$3.600

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$3.900

$3.670

$3.600

iodParts Technologies Inc.

India . 15,801 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,077 parts In-Stock

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Lixinc

USA . 11,872 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

USA . 8,104 parts In-Stock

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Problanco Electronics

Mexico . 7,903 parts In-Stock

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SupplyDigital Components

Austria . 6,896 parts In-Stock

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Kulean Microsystems

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Speed Components Ltd (Excess)

Israel . 3,287 parts In-Stock

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GreenTree Electronics

Israel . 2,950 parts In-Stock

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TANS Electronics

Latvia . 1,948 parts In-Stock

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Supply Digital

USA . 1,718 parts In-Stock

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Northwest PG Solutions

USA . 1,132 parts In-Stock

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$5.831

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Overview

Discover the cutting-edge FDPC8012S Small Signal Field Effect Transistor by Onsemi, designed to deliver exceptional performance and reliability. With a focus on quality and innovation, Onsemi is a trusted manufacturer known for producing top-notch electronic components. This N-CHANNEL transistor is perfect for switching applications, offering enhanced functionality and efficiency. Its series connected, center tap configuration with built-in diode ensures seamless operation. Experience the value and benefits of this product, from its high power dissipation capacity to its low drain-source on resistance. Elevate your projects with the FDPC8012S and unlock a new level of performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capability and low on-resistance for improved performance in electronic circuits.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for more complex circuit designs and versatile applications in various electronic systems.

Transistor Application: SWITCHING

Specifically designed for switching applications, providing fast and efficient switching with low power dissipation.

Surface Mount: YES

Facilitates easy and convenient mounting on PCBs, saving space and allowing for automated assembly processes.

Minimum DS Breakdown Voltage: 25 V

Suitable for low to medium voltage applications, ensuring reliable operation within specified voltage limits.

Maximum Drain Current (Abs): 88 A

Capable of handling high current loads, making it suitable for power applications requiring high current switching.

Maximum Power Dissipation (Abs): 2 W

Can dissipate heat efficiently, ensuring reliable operation under maximum power conditions.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, allowing for operation in challenging environments without performance degradation.

Maximum Drain-Source On Resistance: 0.007 ohm

Offers low on-resistance, reducing power losses and improving efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDPC8012S attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

88 A

Maximum Drain Current (ID):

13 A

Maximum Drain-Source On Resistance:

.007 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-240BA

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDPC8012S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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