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FDPC5030SG

Onsemi

FDPC5030SG by Onsemi

FDPC5030SG by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 17A ID, and 0.005 ohm RDS. It is used for SWITCHING applications in SERIES CONNECTED configuration. This small outline transistor operates b/w -55 to 150 °C and has a peak reflow temp of 260 °C.

Median Price

$0.754

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,245 parts In-Stock

1+ parts

$0.655

100+ parts

$0.625

1k+ parts

$0.595

10k+ parts

-

2,245

$0.655

$0.625

$0.595

-

Chip1Stop

Japan . 2,600 parts In-Stock

1+ parts

$1.463

100+ parts

$0.973

1k+ parts

$0.787

10k+ parts

-

2,600

$1.463

$0.973

$0.787

-

Mouser Electronics

USA . 3,838 parts In-Stock

1+ parts

$2.200

100+ parts

$0.910

1k+ parts

$0.684

10k+ parts

$0.623

3,838

$2.200

$0.910

$0.684

$0.623

Flip Electronics (Authorized)

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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39,000

-

-

-

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Rochester

USA . 34,047 parts In-Stock

1+ parts

-

100+ parts

$0.740

1k+ parts

$0.614

10k+ parts

$0.547

34,047

-

$0.740

$0.614

$0.547

Verical

USA . 25,306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.767

10k+ parts

$0.684

25,306

-

-

$0.767

$0.684

DigiKey

USA . 7,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.545

7,711

-

-

-

$0.545

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,663 parts In-Stock

1+ parts

$0.575

100+ parts

-

1k+ parts

-

10k+ parts

-

1,663

$0.575

-

-

-

Vyrian

USA . 1,004 parts In-Stock

1+ parts

$0.605

100+ parts

-

1k+ parts

-

10k+ parts

-

1,004

$0.605

-

-

-

TME

Poland . 2,986 parts In-Stock

1+ parts

$1.080

100+ parts

$0.860

1k+ parts

$0.720

10k+ parts

$0.670

2,986

$1.080

$0.860

$0.720

$0.670

Chip Stock

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

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26,000

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Flip Electronics

USA . 21,000 parts In-Stock

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21,000

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$1.100

6,000

-

-

-

$1.100

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,786 parts In-Stock

1+ parts

$0.544

100+ parts

-

1k+ parts

-

10k+ parts

-

1,786

$0.544

-

-

-

Corohmni

South Africa . 88 parts In-Stock

1+ parts

$0.605

100+ parts

-

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-

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88

$0.605

-

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Microchip USA

USA . 4,440 parts In-Stock

1+ parts

$5.712

100+ parts

-

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-

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4,440

$5.712

-

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Native Components

USA . 474 parts In-Stock

1+ parts

$7.050

100+ parts

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474

$7.050

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Kepictronics

USA . 24,000 parts In-Stock

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24,000

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QUARKTWIN TECHNOLOGY LTD

USA . 9,114 parts In-Stock

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9,114

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SupplyDigital Components

Austria . 6,544 parts In-Stock

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6,544

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Problanco Electronics

Mexico . 2,850 parts In-Stock

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2,850

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Supply Digital

USA . 1,929 parts In-Stock

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1,929

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Kulean Microsystems

USA . 1,327 parts In-Stock

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1,327

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TANS Electronics

Latvia . 965 parts In-Stock

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965

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Northwest PG Solutions

USA . 756 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$6.909

10k+ parts

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756

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-

$6.909

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UHIMA Technologies

Türkiye . 332 parts In-Stock

1+ parts

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332

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Overview

Discover the cutting-edge FDPC5030SG by Onsemi, a top-tier manufacturer of Small Signal Field Effect Transistors (FET). This innovative product boasts a range of applications in switching, thanks to its N-channel configuration and 30V minimum DS breakdown voltage. With a maximum drain current of 17A and low on-resistance, this transistor ensures high performance and efficiency. Designed for enhancement mode operation, it offers reliability and durability in various electronic systems. Elevate your projects with the FDPC5030SG's superior quality and advanced technology, delivering unmatched value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Offers good conductivity and efficiency for switching applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Enables versatile circuit design options and can handle complex switching requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it an ideal choice for such purposes.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and facilitating mass production.

Minimum DS Breakdown Voltage: 30 V

Provides a safe operating range and protects the transistor from voltage spikes.

Maximum Drain Current (ID): 17 A

Capable of handling high currents, making it suitable for applications requiring robust performance.

Maximum Drain-Source On Resistance: 0.005 ohm

Low on-resistance ensures minimal power loss and efficient operation.

Maximum Power Dissipation (Abs): 25 W

Can handle high power dissipation, suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Designed to operate at high temperatures without compromising performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDPC5030SG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

17 A

Maximum Drain-Source On Resistance:

.005 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

60 pF

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDPC5030SG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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