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FDN86501LZ

Onsemi

FDN86501LZ by Onsemi

FDN86501LZ by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.6A and an Operating Temperature range of -55 to 150 °C. The package style is SMALL OUTLINE, making it suitable for surface mount designs requiring high power dissipation up to 1.5W.

Median Price

$1.220

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,272 parts In-Stock

1+ parts

$1.220

100+ parts

$0.854

1k+ parts

$0.769

10k+ parts

-

1,272

$1.220

$0.854

$0.769

-

Element14

Singapore . 1,215 parts In-Stock

1+ parts

$2.800

100+ parts

$1.870

1k+ parts

$1.600

10k+ parts

-

1,215

$2.800

$1.870

$1.600

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Newark

USA . 2,549 parts In-Stock

1+ parts

$2.890

100+ parts

$1.110

1k+ parts

$0.987

10k+ parts

-

2,549

$2.890

$1.110

$0.987

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Mouser Electronics

USA . 27,953 parts In-Stock

1+ parts

$3.010

100+ parts

$1.340

1k+ parts

$1.030

10k+ parts

-

27,953

$3.010

$1.340

$1.030

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DigiKey

USA . 8,169 parts In-Stock

1+ parts

$3.010

100+ parts

$1.338

1k+ parts

$1.025

10k+ parts

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8,169

$3.010

$1.338

$1.025

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Rochester

USA . 49,818 parts In-Stock

1+ parts

-

100+ parts

$1.140

1k+ parts

$0.946

10k+ parts

$0.844

49,818

-

$1.140

$0.946

$0.844

Farnell

UK . 26,726 parts In-Stock

1+ parts

-

100+ parts

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$0.719

26,726

-

-

-

$0.719

Arrow

USA . 3,000 parts In-Stock

1+ parts

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$1.000

3,000

-

-

-

$1.000

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.850

3,000

-

-

-

$0.850

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,171 parts In-Stock

1+ parts

$0.811

100+ parts

-

1k+ parts

-

10k+ parts

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2,171

$0.811

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.070

100+ parts

-

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10

$1.070

-

-

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Chip Stock

USA . 50,000 parts In-Stock

1+ parts

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50,000

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ComSIT Distribution GmbH

Germany . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 15,417 parts In-Stock

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15,417

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Flip Electronics

USA . 1,909 parts In-Stock

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1,909

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 15,269 parts In-Stock

1+ parts

$0.610

100+ parts

-

1k+ parts

-

10k+ parts

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15,269

$0.610

-

-

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Corohmni

South Africa . 173 parts In-Stock

1+ parts

$0.719

100+ parts

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173

$0.719

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-

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Corphita

USA . 2,735 parts In-Stock

1+ parts

$0.769

100+ parts

-

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10k+ parts

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2,735

$0.769

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-

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Argo Parts USA

USA . 4,429 parts In-Stock

1+ parts

$1.070

100+ parts

-

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4,429

$1.070

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Netroflash

USA . 100 parts In-Stock

1+ parts

$1.070

100+ parts

-

1k+ parts

$1.017

10k+ parts

$0.995

100

$1.070

-

$1.017

$0.995

Microchip USA

USA . 7,819 parts In-Stock

1+ parts

$6.232

100+ parts

-

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7,819

$6.232

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QUARKTWIN TECHNOLOGY LTD

USA . 28,254 parts In-Stock

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28,254

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Perfect Parts

USA . 15,142 parts In-Stock

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15,142

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TANS Electronics

Latvia . 7,991 parts In-Stock

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7,991

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Kulean Microsystems

USA . 6,436 parts In-Stock

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6,436

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SupplyDigital Components

Austria . 6,178 parts In-Stock

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6,178

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

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$1.120

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3,000

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$1.120

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GreenTree Electronics

Israel . 2,545 parts In-Stock

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2,545

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Authorized Procurement Solutions

USA . 2,445 parts In-Stock

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2,445

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Problanco Electronics

Mexico . 2,099 parts In-Stock

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2,099

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Supply Digital

USA . 1,685 parts In-Stock

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1,685

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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206

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Lixinc

USA . 17 parts In-Stock

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17

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Overview

Experience the superior performance and reliability of the FDN86501LZ by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality small signal Field Effect Transistors (FET) that are ideal for switching applications. With a single configuration and built-in diode, this N-channel transistor offers efficiency and convenience. The FDN86501LZ operates in enhancement mode with a maximum power dissipation of 1.5 W, making it a cost-effective solution for your electronics projects. Trust Onsemi for cutting-edge technology and unparalleled value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Enhances the switching performance and efficiency of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltage levels, adding to the versatility of the transistor.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Maximum Drain Current (ID): 2.6 A

Capable of handling higher currents, making it suitable for applications that require power.

Maximum Drain-Source On Resistance: 0.116 ohm

Low on-resistance ensures efficient power transfer and minimal heat dissipation.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, expanding its range of applications.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature conditions, enhancing its suitability for diverse settings.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power dissipation levels without compromising performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDN86501LZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.6 A

Maximum Drain-Source On Resistance:

.116 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDN86501LZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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