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FDN86246

Onsemi

FDN86246 by Onsemi

FDN86246 by Onsemi is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 1.6A and low on-resistance of 0.261 ohm, it offers efficient performance in small outline packages.

Median Price

$1.240

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4,121 parts In-Stock

1+ parts

$1.210

100+ parts

$0.614

1k+ parts

$0.456

10k+ parts

$0.415

4,121

$1.210

$0.614

$0.456

$0.415

Chip1Stop

Japan . 492 parts In-Stock

1+ parts

$1.270

100+ parts

$0.713

1k+ parts

$0.463

10k+ parts

$0.439

492

$1.270

$0.713

$0.463

$0.439

Newark

USA . 7,014 parts In-Stock

1+ parts

$1.670

100+ parts

$0.719

1k+ parts

$0.522

10k+ parts

-

7,014

$1.670

$0.719

$0.522

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Element14

Singapore . 2,863 parts In-Stock

1+ parts

$1.890

100+ parts

$1.200

1k+ parts

$0.828

10k+ parts

$0.709

2,863

$1.890

$1.200

$0.828

$0.709

Mouser Electronics

USA . 18,958 parts In-Stock

1+ parts

$1.930

100+ parts

$0.755

1k+ parts

$0.636

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-

18,958

$1.930

$0.755

$0.636

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DigiKey

USA . 13,573 parts In-Stock

1+ parts

$2.090

100+ parts

$0.900

1k+ parts

$0.654

10k+ parts

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13,573

$2.090

$0.900

$0.654

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Rochester

USA . 38,336 parts In-Stock

1+ parts

-

100+ parts

$0.691

1k+ parts

$0.574

10k+ parts

$0.511

38,336

-

$0.691

$0.574

$0.511

Verical

USA . 21,084 parts In-Stock

1+ parts

-

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-

1k+ parts

$0.717

10k+ parts

$0.639

21,084

-

-

$0.717

$0.639

Arrow

USA . 12,000 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.512

12,000

-

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-

$0.512

Master Electronics

USA . 5,403 parts In-Stock

1+ parts

-

100+ parts

$1.145

1k+ parts

$0.441

10k+ parts

$0.435

5,403

-

$1.145

$0.441

$0.435

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 906 parts In-Stock

1+ parts

$0.511

100+ parts

-

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-

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906

$0.511

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.618

100+ parts

-

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-

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10

$0.618

-

-

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Component Electronics Inc.

Canada . 369 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

10k+ parts

-

369

$1.150

$0.870

$0.750

-

Maritex

Poland . 629 parts In-Stock

1+ parts

$1.163

100+ parts

$0.682

1k+ parts

$0.634

10k+ parts

$0.564

629

$1.163

$0.682

$0.634

$0.564

Bristol Electronics

USA . 123 parts In-Stock

1+ parts

$1.425

100+ parts

$0.527

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-

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123

$1.425

$0.527

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Chip Stock

USA . 117,700 parts In-Stock

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117,700

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Flip Electronics

USA . 48,898 parts In-Stock

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48,898

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Vyrian

USA . 13,541 parts In-Stock

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13,541

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Rebound Electronics

UK . 8,611 parts In-Stock

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8,611

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IBS Electronics

USA . 5,534 parts In-Stock

1+ parts

-

100+ parts

$1.332

1k+ parts

$0.768

10k+ parts

$0.660

5,534

-

$1.332

$0.768

$0.660

Holdelec - ElecDif-Pro

France . 3,000 parts In-Stock

1+ parts

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3,000

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ACDS - Activité Composants Distribution Service

France . 979 parts In-Stock

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979

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ComSIT Distribution GmbH

Germany . 737 parts In-Stock

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737

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Microfarads

USA . 213 parts In-Stock

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213

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Elcom Components

USA . 86 parts In-Stock

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86

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Prism Electronics

USA . 11 parts In-Stock

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11

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Inventory MP

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 13,381 parts In-Stock

1+ parts

$0.448

100+ parts

-

1k+ parts

-

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13,381

$0.448

-

-

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Semicontronic

India . 12,199 parts In-Stock

1+ parts

$0.448

100+ parts

$0.437

1k+ parts

$0.435

10k+ parts

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12,199

$0.448

$0.437

$0.435

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Corphita

USA . 280 parts In-Stock

1+ parts

$0.484

100+ parts

-

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280

$0.484

-

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Corohmni

South Africa . 163 parts In-Stock

1+ parts

$0.485

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-

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163

$0.485

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Argo Parts USA

USA . 4,760 parts In-Stock

1+ parts

$0.617

100+ parts

-

1k+ parts

-

10k+ parts

$0.598

4,760

$0.617

-

-

$0.598

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$0.618

100+ parts

$0.587

1k+ parts

$0.558

10k+ parts

$0.550

10

$0.618

$0.587

$0.558

$0.550

Continental Prestige Electronics

USA . 1,472 parts In-Stock

1+ parts

$1.250

100+ parts

$0.755

1k+ parts

$0.500

10k+ parts

-

1,472

$1.250

$0.755

$0.500

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Aztec Data Supply Inc.

USA . 4,970 parts In-Stock

1+ parts

$1.910

100+ parts

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4,970

$1.910

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Microchip USA

USA . 9,553 parts In-Stock

1+ parts

$3.739

100+ parts

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9,553

$3.739

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Kepictronics

USA . 71,000 parts In-Stock

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Perfect Parts

USA . 50,515 parts In-Stock

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50,515

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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24,000

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iodParts Technologies Inc.

India . 24,000 parts In-Stock

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24,000

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Lixinc

USA . 8,983 parts In-Stock

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8,983

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Kulean Microsystems

USA . 6,043 parts In-Stock

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6,043

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TANS Electronics

Latvia . 4,603 parts In-Stock

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4,603

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Supply Digital

USA . 2,792 parts In-Stock

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2,792

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SupplyDigital Components

Austria . 2,607 parts In-Stock

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2,607

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Problanco Electronics

Mexico . 305 parts In-Stock

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305

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UHIMA Technologies

Türkiye . 263 parts In-Stock

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263

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Overview

Discover the power and efficiency of the FDN86246 by Onsemi, a top-quality Small Signal Field Effect Transistor. With its N-CHANNEL design and built-in diode, this transistor is perfect for switching applications. Onsemi's reputation for excellence ensures reliability and performance. Whether you're looking to enhance your circuitry or improve efficiency, the FDN86246 offers maximum power dissipation and low drain-source resistance. Experience the benefits of this state-of-the-art technology and take your projects to the next level with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON-resistance and higher electron mobility, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and safe reverse current protection, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation.

Surface Mount: YES

Being surface mountable makes it easy to integrate the transistor onto a PCB, saving space and allowing for automated assembly.

Minimum DS Breakdown Voltage: 150 V

The high breakdown voltage ensures reliable operation in high voltage circuits, providing robust protection against voltage spikes.

Maximum Drain Current (ID): 1.6 A

Capable of handling a maximum drain current of 1.6 A, this transistor is suitable for applications requiring high current switching.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5 W, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the transistor can operate reliably in a wide range of temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDN86246 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA-LOW RESISTANCE

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

1.6 A

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.261 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDN86246 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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