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FDMQ8205

Onsemi

FDMQ8205 by Onsemi

FDMQ8205 by Onsemi is a small signal field effect transistor (FET) with N-channel and P-channel polarity. It has a max drain current of 1.7A and a max drain-source on resistance of 0.051 ohm. This transistor is commonly used for switching applications in electronic circuits.

Median Price

$4.165

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1 parts In-Stock

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$3.700

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1

$3.700

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Arrow

USA . 3,053 parts In-Stock

1+ parts

$4.630

100+ parts

$2.942

1k+ parts

$2.798

10k+ parts

$2.740

3,053

$4.630

$2.942

$2.798

$2.740

Mouser Electronics

USA . 187 parts In-Stock

1+ parts

$6.970

100+ parts

$3.500

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-

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187

$6.970

$3.500

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Element14

Singapore . 4,842 parts In-Stock

1+ parts

$7.660

100+ parts

$4.220

1k+ parts

$4.210

10k+ parts

$4.150

4,842

$7.660

$4.220

$4.210

$4.150

Verical

USA . 3,053 parts In-Stock

1+ parts

-

100+ parts

$2.942

1k+ parts

$2.798

10k+ parts

$2.740

3,053

-

$2.942

$2.798

$2.740

Farnell

UK . 2,703 parts In-Stock

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$3.190

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$2.390

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2,703

-

$3.190

$2.390

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$3.171

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100

$3.171

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Digiode

USA . 1,158 parts In-Stock

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$3.515

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1,158

$3.515

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Chip Stock

USA . 56,000 parts In-Stock

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56,000

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Flip Electronics

USA . 18,000 parts In-Stock

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Bristol Electronics

USA . 6,829 parts In-Stock

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Vyrian

USA . 1,959 parts In-Stock

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Cyclops Electronics Ltd

UK . 21 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,308 parts In-Stock

1+ parts

$0.357

100+ parts

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1,308

$0.357

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Ampacity Inc.

Singapore . 2,122 parts In-Stock

1+ parts

$2.330

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2,122

$2.330

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Semicontronic

India . 2,652 parts In-Stock

1+ parts

$2.500

100+ parts

$2.438

1k+ parts

$2.425

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2,652

$2.500

$2.438

$2.425

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Corohmni

South Africa . 88 parts In-Stock

1+ parts

$2.650

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88

$2.650

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Argo Parts USA

USA . 3,410 parts In-Stock

1+ parts

$3.170

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3,410

$3.170

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Corphita

USA . 2,567 parts In-Stock

1+ parts

$3.330

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2,567

$3.330

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Continental Prestige Electronics

USA . 2,415 parts In-Stock

1+ parts

$5.400

100+ parts

$3.580

1k+ parts

$2.480

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-

2,415

$5.400

$3.580

$2.480

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Microchip USA

USA . 4,096 parts In-Stock

1+ parts

$19.580

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4,096

$19.580

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Robosynatics

Brazil . 15,737 parts In-Stock

1+ parts

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$1.236

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$1.211

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$1.211

15,737

-

$1.236

$1.211

$1.211

Lucentia Tech

USA . 15,737 parts In-Stock

1+ parts

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$1.236

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$1.211

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$1.211

15,737

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$1.236

$1.211

$1.211

Perfect Parts

USA . 15,307 parts In-Stock

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Lixinc

USA . 14,818 parts In-Stock

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TANS Electronics

Latvia . 7,802 parts In-Stock

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Kulean Microsystems

USA . 7,472 parts In-Stock

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Problanco Electronics

Mexico . 4,651 parts In-Stock

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SupplyDigital Components

Austria . 2,540 parts In-Stock

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Supply Digital

USA . 2,537 parts In-Stock

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2,537

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Netroflash

USA . 2,000 parts In-Stock

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$3.107

1k+ parts

$3.012

10k+ parts

$2.949

2,000

-

$3.107

$3.012

$2.949

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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376

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GreenTree Electronics

Israel . 160 parts In-Stock

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160

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Overview

Experience high-quality performance with the FDMQ8205 by Onsemi, a leading manufacturer in small signal field effect transistors (FET). This complex configuration transistor offers enhanced switching capabilities, making it perfect for various applications. With its surface mount capability and compact rectangular package shape, it is easy to integrate into your designs. The FDMQ8205 delivers outstanding value by providing a maximum drain current of 1.7 A and a low drain-source on resistance of 0.051 ohm. Trust in Onsemi's expertise and choose the FDMQ8205 for reliable and efficient performance in all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy material ensures durability and resistance to environmental factors, making it long-lasting and suitable for various applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

The presence of both N-channel and P-channel types allows for versatile usage, enabling efficient signal switching and amplification.

Configuration: COMPLEX

With a complex configuration, this field effect transistor can handle intricate circuitry, offering enhanced performance and flexibility in various electrical applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product excels in quickly and efficiently controlling the flow of signals, making it ideal for electronic devices requiring instant response.

Surface Mount: YES

The surface mount capability of this transistor eases the integration process, enabling efficient PCB assembly and reducing overall production costs.

Package Shape: RECTANGULAR

Featuring a rectangular package shape, this transistor takes up minimal space on the PCB, providing versatility in design and allowing for compact and efficient circuit layouts.

Terminal Form: NO LEAD

The absence of leads simplifies the installation process, reducing the risk of damage during assembly and enhancing reliability in various electronic systems.

Operating Mode: ENHANCEMENT MODE

This enhancement mode transistor offers high sensitivity and responsiveness, allowing for precise control and modulation of electrical signals, enhancing overall system performance.

No. of Elements: 4

With four elements incorporated into this transistor, it provides increased functionality and versatility, enabling complex circuit designs and applications.

No. of Terminals: 12

The presence of twelve terminals offers numerous connection options, facilitating intricate circuitry and allowing for precise signal routing in diverse electronic systems.

Package Style (Meter): SMALL OUTLINE

This small outline package style ensures efficient utilization of space on the PCB, providing advantageous opportunities for compact and optimized circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology, this transistor delivers reliable and consistent performance while minimizing power consumption, making it an efficient choice for various applications.

Transistor Element Material: SILICON

Constructed with silicon as the element material, this transistor exhibits superior electrical properties, such as high current capability and low signal distortion, ensuring reliable and precise signal processing.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

The use of Nickel Palladium Gold Silver as the terminal finish guarantees excellent corrosion resistance, ensuring prolonged product lifespan and reliable performance in various environments.

Maximum Drain Current (ID): 1.7 A

With a high maximum drain current of 1.7 A, this transistor can handle substantial current loads, enabling it to power a wide range of electronic devices and systems effectively.

Maximum Drain-Source On Resistance: 0.051 ohm

Featuring a low drain-source on resistance of 0.051 ohm, this transistor exhibits efficient power management and minimal energy loss, leading to improved overall system efficiency.

Terminal Position: DUAL

The dual-terminal position provides flexibility in circuit design, allowing for convenient placement and connection compatibility, making it suitable for different application requirements.

Moisture Sensitivity Level (MSL): 1

With an MSL level of 1, this transistor is resistant to moisture damage during storage and assembly, ensuring consistent performance and reliability in various operating conditions.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand a maximum time of 30 seconds at the peak reflow temperature, minimizing the risk of thermal damage during assembly, and ensuring long-term stability and operational safety.

Peak Reflow Temperature °C: 260

Designed to withstand a peak reflow temperature of 260°C, this transistor can endure high-temperature soldering processes, ensuring reliable and robust solder joints for enhanced product reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDMQ8205 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.051 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N12

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

12

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMQ8205 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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