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FDMF6840C-F013

Onsemi

FDMF6840C-F013 by Onsemi

FDMF6840C-F013 by Onsemi is a MOSFET gate driver with 40 terminals, operating at -40 to 125 °C. It has a max supply voltage of 5.5 V and is designed for automotive applications requiring a half-bridge based MOSFET driver in a square package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,447 parts In-Stock

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Digiode

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Native Components

USA . 745 parts In-Stock

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$2.060

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Northwest PG Solutions

USA . 392 parts In-Stock

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AZTECH Wire

Italy . 276 parts In-Stock

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$20.620

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SupplyDigital Components

Austria . 8,351 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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TANS Electronics

Latvia . 5,720 parts In-Stock

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Microchip USA

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Kulean Microsystems

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Corphita

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UHIMA Technologies

Türkiye . 432 parts In-Stock

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Corohmni

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Overview

Discover the power and precision of the FDMF6840C-F013 by Onsemi, a top-of-the-line MOSFET Gate Driver that delivers unrivaled performance and reliability. Manufactured by industry leader Onsemi, this chip carrier with heat sink/slug package offers a wide range of applications in automotive settings. With its high side driver feature, matte tin terminal finish, and automotive temperature grade, this product ensures optimal functionality and durability. Experience seamless operation and enhanced efficiency with the FDMF6840C-F013 - your ultimate solution for all your gate driving needs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging allows for easy integration onto a PCB, saving space and simplifying assembly process.

Maximum Supply Voltage: 5.5 V

Can handle high supply voltages, making it suitable for a wide range of applications.

Package Shape: SQUARE

Square package shape helps in efficient placement and routing on the PCB.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme environmental conditions.

Nominal Supply Voltage: 5 V

Stable supply voltage ensures reliable operation of the MOSFET gate driver.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge based design allows for efficient driving of MOSFETs, enabling high-performance applications.

Technical Specifications

MOSFET Gate Drivers FDMF6840C-F013 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-XQCC-N40

JESD-609 Code:

e3

Length:

6 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC40,.24SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.5 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

FDMF6840C-F013 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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