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FDMF6730

Onsemi

FDMF6730 by Onsemi

FDMF6730 by Onsemi is a MOSFET gate driver with 40 terminals, suitable for surface mount applications. It operates at supply voltages b/w 4.5V to 5.5V and has a nominal output peak current limit of 0.18A. This driver is ideal for high side applications requiring a compact design with a low seated height of 0.8mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,303 parts In-Stock

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Vyrian

USA . 592 parts In-Stock

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592

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 478 parts In-Stock

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$8.197

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478

$8.197

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AZTECH Wire

Italy . 407 parts In-Stock

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$16.204

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407

$16.204

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Ampacity Inc.

Singapore . 994 parts In-Stock

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$31.500

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994

$31.500

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SupplyDigital Components

Austria . 7,436 parts In-Stock

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Problanco Electronics

Mexico . 7,370 parts In-Stock

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Kulean Microsystems

USA . 5,753 parts In-Stock

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TANS Electronics

Latvia . 4,506 parts In-Stock

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Continental Prestige Electronics

USA . 2,385 parts In-Stock

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Corphita

USA . 1,800 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Supply Digital

USA . 830 parts In-Stock

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Argo Parts USA

USA . 496 parts In-Stock

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Corohmni

South Africa . 383 parts In-Stock

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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271

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Microchip USA

USA . 133 parts In-Stock

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133

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Overview

Enhance your electronic design projects with the FDMF6730 MOSFET Gate Driver by Onsemi. With a reputation for high-quality manufacturing, Onsemi delivers a reliable and efficient product that is perfect for a variety of applications. This surface mount chip carrier boasts a low profile and quad terminal position, making it easy to integrate into your designs. Experience the benefits of this driver, including a maximum supply voltage of 5.5V and nominal output peak current limit of 0.18A. Elevate your projects with the FDMF6730 and see the difference in performance and reliability.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and convenient mounting on a PCB, saving space and facilitating automated assembly processes.

Maximum Supply Voltage: 5.5 V

A higher maximum supply voltage provides flexibility and compatibility with a wide range of power sources.

Package Shape: SQUARE

The square package shape is compact and provides efficient use of space on the PCB.

No. of Terminals: 40

Having a high number of terminals allows for versatile connectivity options and integration with other components.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

This package style offers efficient heat dissipation and a low profile, making it suitable for space-constrained applications.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage ensures compatibility with various power sources and enhances the product's versatility.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of these materials for terminal finish ensures good conductivity and reliable connections.

Terminal Position: QUAD

The quad terminal position provides stable and secure connections, enhancing the overall reliability of the product.

Maximum Seated Height: 0.8 mm

The low maximum seated height allows for a compact design, making it suitable for applications with limited space.

Width: 6 mm

The moderate width of the product allows for easy integration into different PCB designs and layouts.

High Side Driver: YES

The presence of a high side driver enables efficient and effective control of power MOSFETs in high-side switching applications.

Maximum Time At Peak Reflow Temperature (s): 30

The product can withstand peak reflow temperatures for up to 30 seconds, ensuring robustness during the assembly process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable and consistent soldering during manufacturing.

Length: 6 mm

The moderate length of the product allows for easy placement on the PCB and integration into various electronic systems.

Terminal Form: NO LEAD

The no-lead terminal form ensures a clean and efficient design, reducing the risk of short circuits and improving overall reliability.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V makes it compatible with standard power sources, simplifying integration into existing systems.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for a high density of terminals, enabling efficient and compact PCB layouts.

Moisture Sensitivity Level (MSL): 3

The MSL of 3 indicates the level of protection against moisture, ensuring long-term reliability in various environmental conditions.

Nominal Output Peak Current Limit: 0.18 A

The high nominal output peak current limit allows for robust and efficient operation of the MOSFET gate driver.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The interface IC type provides flexibility in driving MOSFETs, catering to a wide range of applications and circuit configurations.

Technical Specifications

MOSFET Gate Drivers FDMF6730 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-XQCC-N40

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

40

Nominal Output Peak Current Limit:

.18 A

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

FDMF6730 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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