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FDMF5821DC

Onsemi

FDMF5821DC by Onsemi

FDMF5821DC by Onsemi is a MOSFET gate driver with a max supply voltage of 5.5V and a min supply voltage of 4.5V. It has a nominal output peak current limit of 7A and is commonly used in automotive applications.

Median Price

$3.685

Lifecycle Status

EOL

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 46 parts In-Stock

1+ parts

$5.300

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46

$5.300

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Rochester

USA . 9,663 parts In-Stock

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-

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$2.070

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$1.850

10k+ parts

$1.740

9,663

-

$2.070

$1.850

$1.740

Distributors (In-Stock)

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Digiode

USA . 1,888 parts In-Stock

1+ parts

$2.194

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1,888

$2.194

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Nova Conductors

Japan . 48 parts In-Stock

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$3.404

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48

$3.404

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Chip Stock

USA . 10,500 parts In-Stock

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10,500

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Vyrian

USA . 4,461 parts In-Stock

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4,461

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Netsource Technology, Inc.

USA . 20 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,598 parts In-Stock

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$1.960

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4,598

$1.960

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Corphita

USA . 2,506 parts In-Stock

1+ parts

$2.079

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2,506

$2.079

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Corohmni

South Africa . 372 parts In-Stock

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$2.310

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372

$2.310

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$3.336

100+ parts

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$3.202

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500

$3.336

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$3.202

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Argo Parts USA

USA . 4,038 parts In-Stock

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$3.404

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4,038

$3.404

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Continental Prestige Electronics

USA . 1,999 parts In-Stock

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$3.404

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$3.336

1,999

$3.404

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$3.336

Aztec Data Supply Inc.

USA . 4,349 parts In-Stock

1+ parts

$14.312

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4,349

$14.312

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RC Electronics

USA . 43,421 parts In-Stock

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$2.400

1k+ parts

$2.190

10k+ parts

$2.130

43,421

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$2.400

$2.190

$2.130

Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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Perfect Parts

USA . 18,921 parts In-Stock

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Lixinc

USA . 11,298 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,317 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Problanco Electronics

Mexico . 3,999 parts In-Stock

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SupplyDigital Components

Austria . 3,345 parts In-Stock

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TANS Electronics

Latvia . 2,289 parts In-Stock

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Microchip USA

USA . 2,103 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Supply Digital

USA . 1,993 parts In-Stock

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Kulean Microsystems

USA . 1,482 parts In-Stock

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1,482

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UHIMA Technologies

Türkiye . 534 parts In-Stock

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534

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Futuretech Components

Singapore . 500 parts In-Stock

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500

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Overview

Discover the FDMF5821DC by Onsemi, a high-quality MOSFET gate driver that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product is designed to meet the exacting standards of today's applications. With its compact square shape and surface mount capability, it is easy to integrate into your designs. The FDMF5821DC offers numerous advantages, including a wide supply voltage range, high-side driver capability, and automotive-grade temperature rating. Whether you're working on automotive electronics, industrial automation, or power management systems, this product provides the value, benefits, and advantages you need for success. Trust Onsemi and the FDMF5821DC to power your innovation forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the internal components of the MOSFET gate driver, making it suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the MOSFET gate driver onto a circuit board, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage of 5.5 V ensures compatibility with a wide range of power sources, making this MOSFET gate driver versatile and adaptable.

Package Shape: SQUARE

The square package shape provides a compact and space-efficient design for the MOSFET gate driver, allowing for easy integration into tight spaces within a circuit.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this MOSFET gate driver is suitable for use in demanding environments where heat resistance is essential for reliable performance.

Nominal Output Peak Current Limit: 7 A

The high nominal output peak current limit of 7 A ensures that the MOSFET gate driver can handle high current loads, making it ideal for power electronics applications requiring robust performance.

Technical Specifications

MOSFET Gate Drivers FDMF5821DC attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N31

JESD-609 Code:

e3

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

31

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

7 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC31(UNSPEC)

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

FDMF5821DC Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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