Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FDD3N40TM by Onsemi is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 8A IDM, 46mJ EAS, and 30W Max Power Dissipation. With ENHANCEMENT MODE operation and GULL WING terminals, it offers reliable performance in various electronic systems.
Median Price
$0.658
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Mouser Electronics
$1.450
$0.587
$0.394
Arrow
$0.869
DigiKey
$0.279
Master Electronics
$0.463
$0.300
$0.270
Verical
$0.853
$0.523
$0.382
Flip Electronics (Authorized)
Digiode
$0.260
Nova Conductors
$0.374
Chip Stock
Vyrian
IBS Electronics
$0.430
Flip Electronics
Dark Horse Electronics
Prism Electronics
Ampacity Inc.
Corphita
$0.247
Corohmni
Continental Prestige Electronics
$0.366
Argo Parts USA
$0.363
Aztec Data Supply Inc.
$0.880
Perfect Parts
iodParts Technologies Inc.
Lixinc
Futuretech Components
Problanco Electronics
Assy Fe
Kulean Microsystems
Speed Components Ltd (Excess)
Supply Digital
Authorized Procurement Solutions
Computer Components Inc. - USA
SupplyDigital Components
TANS Electronics
UHIMA Technologies
PLASTIC/EPOXY material offers good insulation and protection for the internal components, ensuring reliable performance and durability.
N-CHANNEL type allows for efficient current flow in the specified direction, enhancing the overall performance of the transistor.
The built-in diode simplifies circuit design and provides protection against reverse current flow, making it a convenient choice for various switching applications.
Designed for switching applications, this FET ensures fast and effective operation in various electronic circuits.
Surface mount capability allows for easy integration onto circuit boards, saving space and facilitating automated assembly processes.
With a high breakdown voltage, this FET can handle higher voltages without breakdown, making it suitable for power applications.
Rectangular shape provides a stable and secure mounting option, ensuring proper alignment and soldering during installation.
Gull wing terminals offer strong mechanical support and easy soldering connections, enhancing reliability and efficiency in circuit setups.
Enhancement mode operation enables precise control of the transistor's conductance, allowing for efficient switching and power management.
High pulsed drain current rating ensures the FET can handle sudden surge currents, making it suitable for applications requiring peak power handling.
With a high avalanche energy rating, this FET can withstand energy spikes and transients, ensuring reliable performance in demanding environments.
Sufficient drain current rating for normal operation, enabling reliable performance in various switching applications.
High power dissipation capability allows the FET to handle heat efficiently, ensuring reliable and stable operation under load.
Small outline package offers space-saving benefits, making it ideal for compact electronic devices or applications with limited board space.
Metal-oxide semiconductor technology offers high switching speeds and low power consumption, enhancing overall efficiency and performance.
High maximum operating temperature rating ensures reliable performance in harsh environments or under heavy loads, making it suitable for various applications.
Silicon material provides reliable and consistent performance characteristics, ensuring long-term stability and durability of the FET.
Matte tin finish with annealing process provides strong solder joints and corrosion resistance, ensuring reliable electrical connections and longevity.
High drain current rating enables efficient power handling and ensures reliable operation under normal operating conditions.
Low drain-source on resistance minimizes power loss and heat generation, improving overall efficiency and performance of the FET.
Single terminal position simplifies circuit connections and reduces the risk of errors during installation, ensuring reliable performance in various applications.
Drain case connection simplifies circuit design and improves heat dissipation, enhancing overall performance and reliability of the FET.
Short reflow time minimizes thermal stress on the component, ensuring reliable solder joints and preventing damage during assembly processes.
High peak reflow temperature tolerance ensures proper soldering and reliable connections, meeting industry standards for assembly and reliability.
Power Field Effect Transistors (FET) FDD3N40TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FDD3N40TM Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LP2950CDT-3.3G
Onsemi
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
ST3485EBDR
STMicroelectronics
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
M24308/2-1F
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
RC0805FR-0710RL
Yageo
Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
LM317T
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
2N2222A
Raytheon Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
1N4148W-7-F
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
FDD6685
FDD6685 by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 52W and peak reflow temperature of 260°C, it offers reliable performance in various electronic devices.
ZXMP10A18GTA
ZXMP10A18GTA by Diodes Inc. is a P-CHANNEL power FET with 100V DS breakdown voltage, 16.5A max pulsed drain current, and 0.15 ohm max drain-source on resistance. It is used for switching applications in automotive industry (AEC-Q101).
DN3535N8-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
IXTK3N250L
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Pulsed Drain Current (IDM): 8 A; JEDEC-95 Code: TO-264AA;
JANTX2N6796
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
PMV100EPAR
Nexperia
The Nexperia PMV100EPAR is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 9A IDM and 33mJ EAS, operating in ENHANCEMENT MODE at -55 to 175 °C. With a 0.13 ohm RDS(on), this transistor is suitable for various power management tasks in automotive and industrial sectors.
IRFL9014TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
IRF3205ZLPBF
Infineon Technologies
IRF3205ZLPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a 0.0065 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. With a max power dissipation of 170W, this transistor is designed for high-performance electronic systems.
IRLML6401TR
IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
FDS8949
FDS8949 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 20A IDM. It features SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE configuration, suitable for applications requiring high power dissipation in small outline packages. Ideal for enhancing performance in electronic devices operating at temperatures up to 150°C.
AUIRFR5305TR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Drain-Source On Resistance: .065 ohm; JEDEC-95 Code: TO-252AA;
FQT4N20LTF
FQT4N20LTF by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 3.4A and Avalanche Energy Rating of 52mJ. With ENHANCEMENT MODE operation and small outline package style, it offers efficient performance in various electronic devices.
IRF640NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 72 A; JEDEC-95 Code: TO-262AA;
FQP27P06_SW82127
FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
SPP08N80C3
SPP08N80C3 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high power dissipation and temperature resistance.
FDD8424H_F085A
FDD8424H_F085A by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.
GA05JT12-263
Genesic Semiconductor
Power Field-Effect Transistors;
IRFS7530TRL7PP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; No. of Elements: 1; JESD-609 Code: e3;
NVTFS5116PLTWG
NVTFS5116PLTWG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
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FDD390N15ALZ
FDD390N15ALZ by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 104A IDM, and 0.042 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode in a PLASTIC/EPOXY package. Operating at up to 150°C, this MOSFET offers high power dissipation of 63W.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Pulsed Drain Current (IDM): 104 A; Transistor Element Material: SILICON;
FDD3N50NZTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Moisture Sensitivity Level (MSL): 1; No. of Elements: 1;
FDD3N50NZTM by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 2.5A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 10A Pulsed Drain Current, and 40W Power Dissipation in a small outline package.
FDD3672
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Drain Current (ID): 6.5 A; Terminal Form: GULL WING;
FDD3672 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 6.5A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.028 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 135W in a RECTANGULAR package style.
FDD3680
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
FDD390N15A
FDD390N15A by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 104A and 0.04 ohm Drain-Source On Resistance, operating in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY package with GULL WING terminals offers a compact solution for high-power requirements.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Case Connection: DRAIN; JESD-609 Code: e3;
FDD3706
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
FDD3670
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Minimum DS Breakdown Voltage: 100 V; Peak Reflow Temperature (C): 260;
FDD3510H
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
FDD3672-F085
FDD3672-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 44A Drain Current, and 0.028 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 144W Power Dissipation, -55 to 175 °C Operating Temperature range, and ENHANCEMENT MODE operation.
FDD3672_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD3N40TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
FDD3N40TF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; No. of Terminals: 2; Maximum Operating Temperature: 150 Cel;
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