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FDC8886

Onsemi

FDC8886 by Onsemi

The Onsemi FDC8886 is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 8A, 0.023 ohm RDS(on), and 25pF Crss. The small outline package with GULL WING terminals and matte tin finish makes it suitable for surface mount designs.

Median Price

$0.224

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 901 parts In-Stock

1+ parts

$0.700

100+ parts

$0.302

1k+ parts

$0.222

10k+ parts

$0.189

901

$0.700

$0.302

$0.222

$0.189

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$1.521

100+ parts

$1.506

1k+ parts

-

10k+ parts

-

50

$1.521

$1.506

-

-

Rochester

USA . 94,596 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.186

10k+ parts

$0.166

94,596

-

$0.224

$0.186

$0.166

DigiKey

USA . 94,596 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.280

94,596

-

-

-

$0.280

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.181

3,000

-

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$0.181

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.182

3,000

-

-

-

$0.182

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.214

1k+ parts

$0.163

10k+ parts

-

3,000

-

$0.214

$0.163

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,608 parts In-Stock

1+ parts

$0.174

100+ parts

-

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2,608

$0.174

-

-

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Vyrian

USA . 2,354 parts In-Stock

1+ parts

$0.183

100+ parts

-

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2,354

$0.183

-

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DigiKey Marketplace

USA . 142,596 parts In-Stock

1+ parts

-

100+ parts

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142,596

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NAC Semi

USA . 15,000 parts In-Stock

1+ parts

-

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$0.366

15,000

-

-

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$0.366

Flip Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

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9,000

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IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.252

3,000

-

-

-

$0.252

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,279 parts In-Stock

1+ parts

$0.165

100+ parts

-

1k+ parts

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10k+ parts

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2,279

$0.165

-

-

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Corohmni

South Africa . 236 parts In-Stock

1+ parts

$0.183

100+ parts

-

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236

$0.183

-

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Native Components

USA . 642 parts In-Stock

1+ parts

$0.282

100+ parts

-

1k+ parts

-

10k+ parts

$0.271

642

$0.282

-

-

$0.271

Northwest PG Solutions

USA . 2,232 parts In-Stock

1+ parts

$0.310

100+ parts

-

1k+ parts

-

10k+ parts

$0.274

2,232

$0.310

-

-

$0.274

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.522

100+ parts

$1.506

1k+ parts

$1.445

10k+ parts

-

50

$1.522

$1.506

$1.445

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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90,000

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Perfect Parts

USA . 40,078 parts In-Stock

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40,078

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QUARKTWIN TECHNOLOGY LTD

USA . 11,757 parts In-Stock

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11,757

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,134 parts In-Stock

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TANS Electronics

Latvia . 5,433 parts In-Stock

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Lixinc

USA . 4,370 parts In-Stock

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4,370

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Problanco Electronics

Mexico . 3,200 parts In-Stock

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Kulean Microsystems

USA . 3,120 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,205 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,470 parts In-Stock

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1,470

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Kepictronics

USA . 1,208 parts In-Stock

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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886

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Supply Digital

USA . 825 parts In-Stock

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825

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Overview

Discover the unmatched quality and reliability of the FDC8886 by Onsemi, a leading manufacturer in the industry. This Small Signal Field Effect Transistor (FET) offers exceptional performance in switching applications with its N-CHANNEL configuration and built-in diode. With a maximum drain current of 8A and a low drain-source on resistance of 0.023 ohm, this transistor delivers superior efficiency and power dissipation. Trust in Onsemi's cutting-edge technology and expertise to enhance your electronics projects with the FDC8886. Unlock new possibilities and elevate your designs with this high-quality component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow in the channel, enhancing performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and allows for easier integration into existing systems.

Transistor Application: SWITCHING

Ideal for fast switching applications, making it versatile for various uses.

Surface Mount: YES

Enables easy surface mounting on PCBs, saving space and facilitating assembly.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage, enhancing the transistor's reliability and stability.

Maximum Drain Current (Abs) (ID): 8 A

Capable of handling high current levels, suitable for demanding applications.

Maximum Power Dissipation (Abs): 1.6 W

Efficient power handling capacity, reducing heat buildup and ensuring longevity.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, enhancing the transistor's versatility.

Maximum Drain-Source On Resistance: 0.023 ohm

Low on-resistance for minimal power loss and efficient signal amplification.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDC8886 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

6.5 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

25 pF

JEDEC-95 Code:

MO-193AA

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDC8886 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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