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FDB8441-F085

Onsemi

FDB8441-F085 by Onsemi

FDB8441-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 28A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0025 ohm On Resistance, and 300W Power Dissipation in a RECTANGULAR package.

Median Price

$1.240

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.140

10k+ parts

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5,600

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-

$1.140

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Flip Electronics (Authorized)

USA . 5,600 parts In-Stock

1+ parts

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5,600

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Rochester

USA . 3,277 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.110

10k+ parts

$1.040

3,277

-

$1.240

$1.110

$1.040

Mouser Electronics

USA . 527 parts In-Stock

1+ parts

-

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-

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$1.800

10k+ parts

$1.720

527

-

-

$1.800

$1.720

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,467 parts In-Stock

1+ parts

$1.302

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1,467

$1.302

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DigiKey Marketplace

USA . 8,800 parts In-Stock

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8,800

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Vyrian

USA . 3,718 parts In-Stock

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3,718

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Flip Electronics

USA . 1,600 parts In-Stock

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1,600

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Nova Conductors

Japan . 880 parts In-Stock

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880

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,988 parts In-Stock

1+ parts

$0.970

100+ parts

-

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6,988

$0.970

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Corohmni

South Africa . 201 parts In-Stock

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$1.140

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201

$1.140

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Aztec Data Supply Inc.

USA . 2,068 parts In-Stock

1+ parts

$1.195

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2,068

$1.195

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Corphita

USA . 1,092 parts In-Stock

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$1.233

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1,092

$1.233

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Microchip USA

USA . 110 parts In-Stock

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$10.400

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110

$10.400

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Continental Prestige Electronics

USA . 11,298 parts In-Stock

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TANS Electronics

Latvia . 7,515 parts In-Stock

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7,515

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SupplyDigital Components

Austria . 3,152 parts In-Stock

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Supply Digital

USA . 2,205 parts In-Stock

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2,205

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Problanco Electronics

Mexico . 2,116 parts In-Stock

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2,116

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Argo Parts USA

USA . 1,818 parts In-Stock

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1,818

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Kulean Microsystems

USA . 1,027 parts In-Stock

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1,027

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UHIMA Technologies

Türkiye . 161 parts In-Stock

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161

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Bastille Electronics

Australia . 150 parts In-Stock

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150

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Overview

Enhance your electronic devices with the FDB8441-F085 Power Field Effect Transistor by Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for various applications in the electronics industry. This N-CHANNEL transistor offers unparalleled performance in SWITCHING applications, with a maximum Drain Current of 28A and a Minimum DS Breakdown Voltage of 40V. With its compact design and enhanced mode operation, this transistor ensures efficient power management. Upgrade your devices with the FDB8441-F085 and experience the benefits of superior technology and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, ensuring long-term reliable performance.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON-state resistance and better performance characteristics compared to P-Channel FETs, making this product a good choice for high efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides a path for the reverse current to flow, protecting the FET from damage and improving overall system reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control the flow of current in electronic circuits, making it ideal for power management.

Avalanche Energy Rating (EAS): 947 mJ

The high avalanche energy rating ensures that the FET can handle sudden voltage spikes or surges without breakdown, increasing system robustness.

Maximum Power Dissipation (Abs): 300 W

With a high power dissipation rating, this FET can handle large amounts of power without overheating, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.0025 ohm

The low ON resistance of the FET allows for efficient power flow and minimal power loss, improving overall system efficiency.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this FET can function reliably in harsh environments or under heavy loads, increasing its versatility.

Technical Specifications

Power Field Effect Transistors (FET) FDB8441-F085 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

947 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

28 A

Maximum Drain Current (ID):

28 A

Maximum Drain-Source On Resistance:

.0025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDB8441-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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