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FCD360N65S3R0

Onsemi

FCD360N65S3R0 by Onsemi

FCD360N65S3R0 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 10A ID. Ideal for SWITCHING applications, it features a 0.36 ohm Drain-Source On Resistance and 25A Max Pulsed Drain Current (IDM). The PLASTIC/EPOXY package with GULL WING terminals ensures reliable performance in ENHANCEMENT MODE operation.

Median Price

$1.230

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 681 parts In-Stock

1+ parts

$0.263

100+ parts

$0.251

1k+ parts

$0.242

10k+ parts

-

681

$0.263

$0.251

$0.242

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Chip1Stop

Japan . 2,450 parts In-Stock

1+ parts

$0.851

100+ parts

-

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2,450

$0.851

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Farnell

UK . 1,995 parts In-Stock

1+ parts

$1.210

100+ parts

$0.921

1k+ parts

$0.877

10k+ parts

-

1,995

$1.210

$0.921

$0.877

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Newark

USA . 1,995 parts In-Stock

1+ parts

$1.810

100+ parts

$1.470

1k+ parts

$1.440

10k+ parts

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1,995

$1.810

$1.470

$1.440

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Element14

Singapore . 1,995 parts In-Stock

1+ parts

$1.940

100+ parts

$1.480

1k+ parts

$1.410

10k+ parts

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1,995

$1.940

$1.480

$1.410

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Mouser Electronics

USA . 2,501 parts In-Stock

1+ parts

$2.450

100+ parts

$1.360

1k+ parts

$1.060

10k+ parts

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2,501

$2.450

$1.360

$1.060

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DigiKey

USA . 1,170 parts In-Stock

1+ parts

$3.020

100+ parts

$1.353

1k+ parts

$1.130

10k+ parts

$0.923

1,170

$3.020

$1.353

$1.130

$0.923

Verical

USA . 2,450 parts In-Stock

1+ parts

-

100+ parts

$0.999

1k+ parts

-

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2,450

-

$0.999

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RS (Exports)

UK . 2,450 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.502

2,450

-

-

-

$0.502

Rochester

USA . 615 parts In-Stock

1+ parts

-

100+ parts

$1.250

1k+ parts

$1.040

10k+ parts

$0.925

615

-

$1.250

$1.040

$0.925

Distributors (In-Stock)

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Digiode

USA . 2,260 parts In-Stock

1+ parts

$0.814

100+ parts

-

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2,260

$0.814

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Vyrian

USA . 1,255 parts In-Stock

1+ parts

$0.857

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1,255

$0.857

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Flip Electronics

USA . 12,500 parts In-Stock

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12,500

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-

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Rebound Electronics

UK . 5,000 parts In-Stock

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5,000

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Nova Conductors

Japan . 84 parts In-Stock

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84

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Distributors (Availability)

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Corphita

USA . 1,020 parts In-Stock

1+ parts

$0.771

100+ parts

-

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1,020

$0.771

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Ampacity Inc.

Singapore . 1,583 parts In-Stock

1+ parts

$0.780

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1,583

$0.780

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Corohmni

South Africa . 355 parts In-Stock

1+ parts

$0.846

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355

$0.846

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Microchip USA

USA . 3,705 parts In-Stock

1+ parts

$6.872

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3,705

$6.872

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Perfect Parts

USA . 30,072 parts In-Stock

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30,072

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Lixinc

USA . 19,918 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,873 parts In-Stock

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5,873

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SupplyDigital Components

Austria . 5,257 parts In-Stock

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Kulean Microsystems

USA . 4,152 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,915 parts In-Stock

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Problanco Electronics

Mexico . 2,916 parts In-Stock

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2,916

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Continental Prestige Electronics

USA . 1,793 parts In-Stock

1+ parts

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100+ parts

$0.840

1k+ parts

$0.661

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1,793

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$0.840

$0.661

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TANS Electronics

Latvia . 1,577 parts In-Stock

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1,577

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 202 parts In-Stock

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202

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the FCD360N65S3R0 by Onsemi. Designed with precision and expertise, this N-channel Power Field Effect Transistor (FET) offers unparalleled performance in switching applications. With a minimum DS Breakdown Voltage of 650V and a Maximum Drain Current of 10A, this transistor is a game-changer in the industry. Its single configuration with built-in diode ensures seamless integration, while its small outline package allows for easy installation. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the FCD360N65S3R0 and experience efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

Allows for versatile applications and flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified circuit design and reduced component count, improving efficiency.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast response times and efficient performance.

Surface Mount: YES

Easy to install and compatible with modern PCB assembly processes.

Minimum DS Breakdown Voltage: 650 V

Can handle high voltage applications with reliability and safety.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high switching speeds and low power consumption, enhancing overall performance.

Maximum Drain Current (ID): 10 A

Capable of handling high current loads, suitable for various power applications.

Maximum Drain-Source On Resistance: 0.36 ohm

Low on-resistance minimizes power losses and improves efficiency.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes, ensuring reliability.

Technical Specifications

Power Field Effect Transistors (FET) FCD360N65S3R0 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

40 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

25 A

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FCD360N65S3R0 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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