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EMX1DXV6T1G

Onsemi

EMX1DXV6T1G by Onsemi

The Onsemi EMX1DXV6T1G is a NPN BJT transistor with 2 elements, hFE of 120, and fT of 180 MHz. It is used in amplifier applications, operates at max 150°C, with VCE of 50V and IC of 0.1A.

Median Price

$0.510

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,129 parts In-Stock

1+ parts

$0.420

100+ parts

$0.162

1k+ parts

$0.107

10k+ parts

$0.074

3,129

$0.420

$0.162

$0.107

$0.074

Mouser Electronics

USA . 12,636 parts In-Stock

1+ parts

$0.510

100+ parts

$0.213

1k+ parts

$0.125

10k+ parts

$0.079

12,636

$0.510

$0.213

$0.125

$0.079

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$8.920

100+ parts

-

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-

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-

4

$8.920

-

-

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Flip Electronics (Authorized)

USA . 3,900 parts In-Stock

1+ parts

-

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3,900

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-

Distributors (In-Stock)

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Digiode

USA . 537 parts In-Stock

1+ parts

$0.228

100+ parts

-

1k+ parts

-

10k+ parts

-

537

$0.228

-

-

-

Vyrian

USA . 1,646 parts In-Stock

1+ parts

$0.240

100+ parts

-

1k+ parts

-

10k+ parts

-

1,646

$0.240

-

-

-

Bristol Electronics

USA . 4,000 parts In-Stock

1+ parts

$0.314

100+ parts

$0.157

1k+ parts

$0.063

10k+ parts

$0.047

4,000

$0.314

$0.157

$0.063

$0.047

ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

-

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Dan-Mar Components

USA . 4,000 parts In-Stock

1+ parts

-

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4,000

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-

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Flip Electronics

USA . 3,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,900

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,675 parts In-Stock

1+ parts

$0.216

100+ parts

-

1k+ parts

-

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1,675

$0.216

-

-

-

Corohmni

South Africa . 354 parts In-Stock

1+ parts

$0.230

100+ parts

-

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354

$0.230

-

-

-

Native Components

USA . 351 parts In-Stock

1+ parts

$16.482

100+ parts

-

1k+ parts

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10k+ parts

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351

$16.482

-

-

-

Northwest PG Solutions

USA . 1,034 parts In-Stock

1+ parts

$18.130

100+ parts

$16.317

1k+ parts

-

10k+ parts

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1,034

$18.130

$16.317

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Perfect Parts

USA . 21,315 parts In-Stock

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21,315

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Lixinc

USA . 11,549 parts In-Stock

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11,549

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Problanco Electronics

Mexico . 7,951 parts In-Stock

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7,951

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Kulean Microsystems

USA . 5,364 parts In-Stock

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5,364

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Kepictronics

USA . 5,120 parts In-Stock

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5,120

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TANS Electronics

Latvia . 4,797 parts In-Stock

1+ parts

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4,797

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Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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3,700

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SupplyDigital Components

Austria . 2,311 parts In-Stock

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2,311

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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UHIMA Technologies

Türkiye . 377 parts In-Stock

1+ parts

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377

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

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50

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT) for your amplifier applications? Look no further than the EMX1DXV6T1G by Onsemi. With its NPN polarity, separate configuration of 2 elements, and a maximum operating temperature of 150°C, this transistor offers exceptional performance and durability. The matte tin terminal finish and small outline package shape make it easy to integrate into your designs. Trust Onsemi's expertise in semiconductor manufacturing to provide you with a superior product that delivers value and reliability. Choose the EMX1DXV6T1G for your next project and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent operation of each element, providing flexibility in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance in audio and signal processing.

Surface Mount: YES

Easily mountable on printed circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Compact design that allows for efficient placement on PCBs, optimizing board real estate.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance under varying environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing versatility in circuit design.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 180 MHz

Provides high-frequency performance, enabling fast signal processing and response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMX1DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMX1DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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