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EMX1DXV6T1

Onsemi

EMX1DXV6T1 by Onsemi

The Onsemi EMX1DXV6T1 is a NPN BJT with 2 elements, hFE of 120, and VCE max of 50V. Ideal for amplifier applications, it has a transition frequency of 180MHz and can handle a collector current of 0.1A. Suitable for surface mount with a small outline package style.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,500 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

23,500

-

$0.053

$0.044

$0.039

DigiKey

USA . 23,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

23,500

-

-

-

$0.070

Verical

USA . 19,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

19,500

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,485 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

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-

2,485

$0.041

-

-

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Vyrian

USA . 1,042 parts In-Stock

1+ parts

$0.043

100+ parts

-

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-

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-

1,042

$0.043

-

-

-

Prism Electronics

USA . 2,909 parts In-Stock

1+ parts

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2,909

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,401 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,401

$0.039

-

-

-

Component Stockers USA

USA . 21,153 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

21,153

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 396 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

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-

396

$0.043

-

-

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Continental Prestige Electronics

USA . 23,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

23,500

-

-

-

$0.044

Kulean Microsystems

USA . 4,278 parts In-Stock

1+ parts

-

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4,278

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Perfect Parts

USA . 3,258 parts In-Stock

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3,258

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SupplyDigital Components

Austria . 3,121 parts In-Stock

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3,121

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Assy Fe

Spain . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 1,896 parts In-Stock

1+ parts

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1,896

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TANS Electronics

Latvia . 1,713 parts In-Stock

1+ parts

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1,713

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UHIMA Technologies

Türkiye . 737 parts In-Stock

1+ parts

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737

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Native Components

USA . 219 parts In-Stock

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219

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Northwest PG Solutions

USA . 153 parts In-Stock

1+ parts

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153

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Overview

Discover the power of innovation with the EMX1DXV6T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed to amplify your projects to new heights. With a focus on precision and performance, Onsemi's reputation for excellence shines through in every element of this NPN transistor. Perfect for amplifier applications, this product offers seamless integration and superior functionality. Unlock the potential of your electronics with the EMX1DXV6T1, delivering value, efficiency, and reliability that sets it apart from the rest. Elevate your creations with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits, making it a versatile choice for various applications.

Configuration: SEPARATE, 2 ELEMENTS

Allows for flexibility in circuit design and potential for higher performance.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in that application.

Surface Mount: YES

Enables easy installation and saves space on the circuit board.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltage levels, making it suitable for a wider range of applications.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for faster switching speeds and better overall performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMX1DXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMX1DXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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