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EMX1DXV6T5

Onsemi

EMX1DXV6T5 by Onsemi

The Onsemi EMX1DXV6T5 is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a min hFE of 120 and max VCE of 50V. With a transition frequency of 180MHz, it comes in a small outline package ideal for surface mount assembly.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 419,910 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

419,910

-

$0.053

$0.044

$0.039

DigiKey

USA . 419,910 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

419,910

-

-

-

$0.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,367 parts In-Stock

1+ parts

$0.041

100+ parts

-

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-

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1,367

$0.041

-

-

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Vyrian

USA . 985 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

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-

985

$0.043

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 554 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

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554

$0.039

-

-

-

Corohmni

South Africa . 449 parts In-Stock

1+ parts

$0.043

100+ parts

-

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449

$0.043

-

-

-

Native Components

USA . 190 parts In-Stock

1+ parts

$0.832

100+ parts

-

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190

$0.832

-

-

-

Northwest PG Solutions

USA . 1,795 parts In-Stock

1+ parts

$0.915

100+ parts

-

1k+ parts

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1,795

$0.915

-

-

-

Continental Prestige Electronics

USA . 419,910 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.044

419,910

-

-

-

$0.044

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Assy Fe

Spain . 7,290 parts In-Stock

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7,290

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SupplyDigital Components

Austria . 6,180 parts In-Stock

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6,180

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Kepictronics

USA . 5,290 parts In-Stock

1+ parts

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5,290

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-

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Kulean Microsystems

USA . 2,827 parts In-Stock

1+ parts

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2,827

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Problanco Electronics

Mexico . 2,124 parts In-Stock

1+ parts

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2,124

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TANS Electronics

Latvia . 1,497 parts In-Stock

1+ parts

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1,497

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UHIMA Technologies

Türkiye . 496 parts In-Stock

1+ parts

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496

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Overview

Enhance your amplification projects with the high-quality EMX1DXV6T5 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Bipolar Junction Transistors for various applications. The NPN configuration, 2-element design, and surface mount capability make this transistor ideal for amplifier circuits. Experience superior performance and durability with this product, offering a minimum DC current gain of 120 and a maximum collector-emitter voltage of 50V. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the EMX1DXV6T5 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: NPN

Commonly used for amplification purposes in electronic circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensuring optimal performance.

No. of Terminals: 6

Provides multiple connection points for flexibility in circuit design.

Minimum DC Current Gain (hFE): 120

High DC current gain allows for efficient signal amplification.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage handling capability for a variety of applications.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels for reliable performance.

Peak Reflow Temperature °C: 260

High reflow temperature ensures stable and secure soldering connections.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMX1DXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMX1DXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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