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DD54SC

Onsemi

DD54SC by Onsemi

The Onsemi DD54SC is a single rectifier diode with a max forward voltage of 1.8V and output current of 5A. It has a max repetitive peak reverse voltage of 1600V, making it suitable for high-power applications requiring efficient rectification in electronic circuits. The diode's through-hole terminal form and flange mount package style offer easy installation and reliable performance at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,872 parts In-Stock

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Digiode

USA . 651 parts In-Stock

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Native Components

USA . 823 parts In-Stock

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$16.785

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Northwest PG Solutions

USA . 614 parts In-Stock

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$18.463

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$16.617

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Problanco Electronics

Mexico . 7,316 parts In-Stock

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TANS Electronics

Latvia . 5,394 parts In-Stock

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Kulean Microsystems

USA . 2,806 parts In-Stock

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Corphita

USA . 2,000 parts In-Stock

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SupplyDigital Components

Austria . 847 parts In-Stock

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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Overview

Enhance your electronic projects with the DD54SC diode by Onsemi, a leading manufacturer in the industry. This single rectifier diode offers high-quality performance and reliability, making it ideal for a wide range of applications. Whether you're working on power supplies, motor control, or lighting systems, this diode's maximum output current of 5A and maximum repetitive peak reverse voltage of 1600V ensure efficient operation. Trust Onsemi to deliver excellence in every component, and experience the value and benefits that the DD54SC diode brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation properties and resistance to moisture, making the diode durable and reliable for long-term use.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to use in various applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different electronic devices or circuit boards.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, making it user-friendly for individuals without extensive technical knowledge.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a secure mechanical connection, ensuring the diode stays in place during operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Terminal Position: SINGLE

Single terminal position makes it easier to install and connect the diode correctly in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current to direct current, making them suitable for a wide range of applications.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage drop minimizes power loss and improves efficiency in electronic circuits.

Maximum Output Current: 5 A

High output current rating allows the diode to handle larger loads, making it versatile for different power requirements.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables easy and secure soldering onto a circuit board, ensuring a reliable connection.

Maximum Repetitive Peak Reverse Voltage: 1600 V

High reverse voltage rating provides protection against voltage spikes or reverse polarity, enhancing the diode's reliability in demanding applications.

Maximum Non Repetitive Peak Forward Current: 20 A

High non-repetitive peak forward current rating allows the diode to handle short-term surges in current without failure, ensuring stability in the circuit.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency in diode applications, contributing to the diode's overall performance.

Technical Specifications

Diodes & Rectifiers DD54SC attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

1600 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

DD54SC Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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