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DD540N22KHPSA1

Infineon Technologies

DD540N22KHPSA1 by Infineon Technologies

Infineon Technologies' DD540N22KHPSA1 is a series connected rectifier diode with 2 elements, offering a max output current of 540A and max repetitive peak reverse voltage of 2200V. This plastic/epoxy diode operates in temperatures ranging from -40°C to 150°C and is ideal for applications requiring high current rectification.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,235 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Digiode

USA . 287 parts In-Stock

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287

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Ampacity Inc.

Singapore . 1,480 parts In-Stock

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$0.010

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$0.010

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Modulus Dynamics

Lithuania . 1,356 parts In-Stock

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$0.081

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$0.078

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$0.075

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AZTECH Wire

Italy . 576 parts In-Stock

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$15.070

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Continental Prestige Electronics

USA . 3,945 parts In-Stock

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Argo Parts USA

USA . 3,359 parts In-Stock

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Corphita

USA . 198 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your electronic designs with the DD540N22KHPSA1 from Infineon Technologies. This high-quality rectifier diode offers superior performance and reliability, making it the perfect choice for a wide range of applications. With its series connected configuration and center tap design, this diode provides maximum output current of 540 A and a maximum reverse voltage of 2200 V. From industrial equipment to automotive electronics, this versatile component delivers exceptional value, efficiency, and precision. Experience the innovation and excellence that only Infineon Technologies can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long term use.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Offers efficient power distribution and management.

Maximum Reverse Current: 40000 uA

Ensures high level of protection against reverse current flow.

Package Shape: RECTANGULAR

Facilitates easy installation and mounting in various applications.

No. of Terminals: 3

Allows for versatile connectivity options.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable mounting.

Maximum Operating Temperature: 150 °C

Ideal for use in high temperature environments.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions.

Terminal Position: UPPER

Simplifies connection and installation process.

Case Connection: ISOLATED

Enhances safety and prevents electric shock hazards.

Reference Standard: UL RECOGNIZED

Meets the highest safety and quality standards.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications.

Maximum Forward Voltage (VF): 1.48 V

Ensures efficient power conversion with minimal loss.

Maximum Output Current: 540 A

Capable of handling high current loads.

No. of Elements: 2

Provides redundancy and backup for uninterrupted operation.

Maximum Repetitive Peak Reverse Voltage: 2200 V

Offers high voltage protection for sensitive components.

Maximum Non Repetitive Peak Forward Current: 14000 A

Provides robust surge current handling capability.

Diode Element Material: SILICON

Ensures reliable performance and longevity.

Technical Specifications

Diodes & Rectifiers DD540N22KHPSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.48 V

JESD-30 Code:

R-PUFM-X3

Maximum Non Repetitive Peak Forward Current:

14000 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

540 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

2200 V

Maximum Reverse Current:

40000 uA

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

DD540N22KHPSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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