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DD54RC

Onsemi

DD54RC by Onsemi

The Onsemi DD54RC is a RECTIFIER DIODE with 1.5us Reverse Recovery Time, 150 °C Operating Temp, and 1.8V Forward Voltage. Ideal for high-power applications requiring up to 5A output current and 1500V peak reverse voltage protection.

Median Price

$4.900

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 2 parts In-Stock

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Digiode

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Fibra_Brandt Electronic GMBH

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Corohmni

South Africa . 406 parts In-Stock

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Native Components

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Kulean Microsystems

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Northwest PG Solutions

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Overview

Unleash the power of innovation with the Onsemi DD54RC rectifier diode. Manufactured by industry leader Onsemi, this high-quality diode offers unparalleled performance and reliability. Ideal for a wide range of applications, the DD54RC provides fast reverse recovery time and a high maximum output current of 5A, making it perfect for demanding projects. Experience the value and benefits of the Onsemi DD54RC and take your designs to the next level.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 1.5 us

The fast reverse recovery time allows for efficient switching and minimizes power loss, making this diode ideal for high-speed applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without sacrificing performance, ensuring reliability in harsh environments.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed for converting alternating current (AC) to direct current (DC) with low forward voltage drop, making it suitable for various power supply applications.

Maximum Forward Voltage (VF): 1.8 V

The low forward voltage drop of 1.8 V ensures minimal power dissipation and high efficiency in forward conduction, making it energy-efficient.

Maximum Output Current: 5 A

With a high maximum output current of 5 A, this diode can handle heavy loads without overheating, suitable for applications requiring high-current rectification.

Maximum Repetitive Peak Reverse Voltage: 1500 V

The high reverse voltage rating of 1500 V provides robust protection against voltage spikes or reverse polarity, making it suitable for high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 50 A

The diode can handle short-term high forward currents up to 50 A without damage, ensuring reliability and durability under transient overload conditions.

Technical Specifications

Diodes & Rectifiers DD54RC attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

1.5 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

DD54RC Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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