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DBD10G

Onsemi

DBD10G by Onsemi

The Onsemi DBD10G is a Bridge Rectifier Diode with 4 elements, capable of handling up to 1A output current and 600V peak reverse voltage. With a max forward voltage of 1.05V and operating temperature of 150 °C, it is ideal for power supply applications requiring efficient rectification.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,094 parts In-Stock

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Digiode

USA . 1,247 parts In-Stock

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Native Components

USA . 339 parts In-Stock

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$1.860

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339

$1.860

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Northwest PG Solutions

USA . 2,240 parts In-Stock

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$2.046

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$2.046

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Problanco Electronics

Mexico . 8,395 parts In-Stock

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SupplyDigital Components

Austria . 6,938 parts In-Stock

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Kulean Microsystems

USA . 4,169 parts In-Stock

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Corphita

USA . 1,543 parts In-Stock

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TANS Electronics

Latvia . 1,385 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

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UHIMA Technologies

Türkiye . 296 parts In-Stock

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Overview

The Onsemi DBD10G is a top-quality bridge rectifier diode that offers superior performance and reliability for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, customers can trust that they are getting a product that delivers exceptional value and benefits. Whether you need to convert AC to DC power or regulate voltage in your electronic devices, the DBD10G is the perfect solution for all your needs. Upgrade to the DBD10G today and experience the advantages of using a high-quality product from a trusted manufacturer.

Feature Benefit Bullets

Config: BRIDGE, 4 ELEMENTS

Having 4 elements in a bridge configuration ensures better efficiency and reliability in rectifying AC to DC.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this bridge rectifier diode can withstand elevated temperatures, making it suitable for various industrial applications.

Diode Type: BRIDGE RECTIFIER DIODE

Being a bridge rectifier diode, it provides full-wave rectification which results in smoother DC output compared to half-wave rectification.

Maximum Forward Voltage (VF): 1.05 V

The low maximum forward voltage drop of 1.05 volts ensures minimal power loss and efficient conversion of AC to DC.

Maximum Output Current: 1 A

With a maximum output current of 1 ampere, this bridge rectifier diode can handle moderate loads effectively.

No. of Elements: 4

Having 4 elements provides redundancy and improved reliability in case one element fails, ensuring continuous operation.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage of 600 volts makes this diode suitable for high voltage applications, ensuring protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 30 A

The ability to handle a maximum non-repetitive peak forward current of 30 amperes allows this diode to withstand short-term high current surges without damage.

Technical Specifications

Bridge Rectifier Diodes DBD10G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Config:

BRIDGE, 4 ELEMENTS

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Trade Compliance

DBD10G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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