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DBD10C

Onsemi

DBD10C by Onsemi

The Onsemi DBD10C is a Bridge Rectifier Diode with 4 elements, capable of handling up to 1A output current and 200V peak reverse voltage. With a max forward voltage of 1.05V and operating temperature of 150 °C, it is ideal for power supply applications requiring efficient rectification.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 782 parts In-Stock

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Digiode

USA . 255 parts In-Stock

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Native Components

USA . 317 parts In-Stock

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$0.783

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317

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Northwest PG Solutions

USA . 890 parts In-Stock

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$0.862

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890

$0.862

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TANS Electronics

Latvia . 6,464 parts In-Stock

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Kulean Microsystems

USA . 3,367 parts In-Stock

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SupplyDigital Components

Austria . 3,135 parts In-Stock

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Problanco Electronics

Mexico . 2,394 parts In-Stock

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Corphita

USA . 1,208 parts In-Stock

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UHIMA Technologies

Türkiye . 442 parts In-Stock

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Corohmni

South Africa . 97 parts In-Stock

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Overview

Unleash the power of efficient energy conversion with the DBD10C by Onsemi. Crafted with precision by a trusted manufacturer, this bridge rectifier diode is designed to deliver reliable performance and durability. Ideal for a wide range of applications, this product offers seamless functionality and exceptional value to customers. Upgrade your projects with the DBD10C and experience the difference in quality and efficiency.

Feature Benefit Bullets

Config BRIDGE, 4 ELEMENTS

Having 4 elements in a bridge configuration provides higher reliability and efficiency compared to single diode rectifiers.

Maximum Operating Temperature 150 °C

With a maximum operating temperature of 150 °C, this bridge rectifier diode can withstand high temperature environments, making it suitable for a wide range of applications.

Diode Type BRIDGE RECTIFIER DIODE

Being a bridge rectifier diode, it provides full-wave rectification and ensures a smooth DC output for various electronic circuits.

Maximum Forward Voltage (VF) 1.05 V

The low forward voltage drop of 1.05V results in minimal power loss and higher efficiency in the conversion of AC to DC.

Maximum Output Current 1 A

With a maximum output current of 1A, this bridge rectifier diode can handle moderate power requirements, making it suitable for many applications.

No. of Elements 4

Having 4 elements provides redundancy and ensures continuous operation even if one element fails, increasing the overall reliability of the device.

Maximum Repetitive Peak Reverse Voltage 200 V

The high maximum repetitive peak reverse voltage of 200V makes this bridge rectifier diode suitable for applications requiring high voltage rectification.

Maximum Non Repetitive Peak Forward Current 30 A

The high maximum non-repetitive peak forward current of 30A allows the bridge rectifier diode to handle short-term high current surges, making it versatile and reliable in different scenarios.

Technical Specifications

Bridge Rectifier Diodes DBD10C attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Config:

BRIDGE, 4 ELEMENTS

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Trade Compliance

DBD10C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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