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DBD10G-TM-E

Onsemi

DBD10G-TM-E by Onsemi

The Onsemi DBD10G-TM-E is a surface mount bridge rectifier diode with 4 elements. It has a max operating temperature of 150°C, max forward voltage of 1.05V, and max output current of 1A. Ideal for applications requiring high voltage and current rectification in compact electronic devices.

Median Price

$0.462

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,672 parts In-Stock

1+ parts

-

100+ parts

$0.462

1k+ parts

$0.384

10k+ parts

$0.342

13,672

-

$0.462

$0.384

$0.342

DigiKey

USA . 13,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.390

10k+ parts

-

13,672

-

-

$0.390

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Verical

USA . 13,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

$0.428

13,672

-

-

$0.480

$0.428

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 767 parts In-Stock

1+ parts

$0.360

100+ parts

-

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767

$0.360

-

-

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Vyrian

USA . 2,045 parts In-Stock

1+ parts

$0.379

100+ parts

-

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2,045

$0.379

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 417 parts In-Stock

1+ parts

$0.341

100+ parts

-

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-

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417

$0.341

-

-

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Corohmni

South Africa . 337 parts In-Stock

1+ parts

$0.379

100+ parts

-

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337

$0.379

-

-

-

Component Stockers USA

USA . 17,075 parts In-Stock

1+ parts

$0.390

100+ parts

$0.360

1k+ parts

$0.330

10k+ parts

$0.330

17,075

$0.390

$0.360

$0.330

$0.330

Native Components

USA . 772 parts In-Stock

1+ parts

$28.364

100+ parts

-

1k+ parts

-

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772

$28.364

-

-

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Northwest PG Solutions

USA . 691 parts In-Stock

1+ parts

$31.200

100+ parts

$28.080

1k+ parts

-

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691

$31.200

$28.080

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Continental Prestige Electronics

USA . 13,672 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.469

10k+ parts

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13,672

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-

$0.469

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Problanco Electronics

Mexico . 7,054 parts In-Stock

1+ parts

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7,054

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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RC Electronics

USA . 2,000 parts In-Stock

1+ parts

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2,000

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SupplyDigital Components

Austria . 1,825 parts In-Stock

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1,825

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Kulean Microsystems

USA . 1,378 parts In-Stock

1+ parts

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1,378

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UHIMA Technologies

Türkiye . 258 parts In-Stock

1+ parts

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258

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TANS Electronics

Latvia . 230 parts In-Stock

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230

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Overview

Unleash the power of efficiency and reliability with the DBD10G-TM-E by Onsemi. Crafted by a trusted manufacturer in the industry, this Bridge Rectifier Diode offers unparalleled quality and performance. Ideal for a wide range of applications, this product guarantees seamless operation and durability. Experience the value and benefits of using this diode in your projects, with its superior construction and advanced technology. Upgrade your electronics with the DBD10G-TM-E and unlock a world of possibilities.

Feature Benefit Bullets

Config: BRIDGE, 4 ELEMENTS

Having 4 elements in the bridge configuration provides better stability and efficiency in converting AC to DC.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving in circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperatures, ensuring reliability in various operating conditions.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish offers good solderability and corrosion resistance, contributing to the longevity of the product.

Maximum Forward Voltage (VF): 1.05 V

The low forward voltage drop of 1.05 V helps in minimizing power losses and improving efficiency in electrical circuits.

Maximum Output Current: 1 A

Capable of handling a maximum output current of 1 A, this bridge rectifier diode is suitable for various low to medium power applications.

No. of Elements: 4

Having 4 diode elements provides redundancy and enhances the overall reliability of the bridge rectifier.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high maximum repetitive peak reverse voltage, this diode can safely handle voltage spikes and fluctuations in the circuit.

Maximum Non Repetitive Peak Forward Current: 30 A

The high non-repetitive peak forward current rating of 30 A allows for brief current surges without damaging the diode.

Diode Element Material: SILICON

Silicon diodes are known for their high efficiency and reliability, making this bridge rectifier a dependable choice for various applications.

Technical Specifications

Bridge Rectifier Diodes DBD10G-TM-E attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Trade Compliance

DBD10G-TM-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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