Loading...

DBD10G-TM

Onsemi

DBD10G-TM by Onsemi

The Onsemi DBD10G-TM is a surface mount bridge rectifier diode with 4 elements, capable of handling up to 1A output current and 600V peak reverse voltage. With a max operating temperature of 150 °C, it is ideal for applications requiring efficient AC to DC conversion in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,621

-

-

-

-

Vyrian

USA . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 268 parts In-Stock

1+ parts

$0.601

100+ parts

-

1k+ parts

-

10k+ parts

-

268

$0.601

-

-

-

Northwest PG Solutions

USA . 1,084 parts In-Stock

1+ parts

$0.661

100+ parts

-

1k+ parts

-

10k+ parts

-

1,084

$0.661

-

-

-

TANS Electronics

Latvia . 7,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,079

-

-

-

-

Problanco Electronics

Mexico . 4,472 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,472

-

-

-

-

Kulean Microsystems

USA . 3,461 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,461

-

-

-

-

SupplyDigital Components

Austria . 2,730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,730

-

-

-

-

Corphita

USA . 1,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,444

-

-

-

-

UHIMA Technologies

Türkiye . 375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

375

-

-

-

-

Corohmni

South Africa . 54 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54

-

-

-

-

Overview

Unlock the power of efficiency and reliability with the DBD10G-TM Bridge Rectifier Diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products for a wide range of applications. With its 4-element configuration and surface mount capability, this diode ensures seamless operation at temperatures up to 150 °C. Experience the value of superior performance and longevity with the DBD10G-TM, offering a maximum output current of 1A and a maximum repetitive peak reverse voltage of 600V. Trust Onsemi to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Config: BRIDGE, 4 ELEMENTS

Having 4 bridge elements allows for efficient rectification of AC voltage into DC voltage, making this product suitable for various applications.

Surface Mount: YES

Being surface mountable makes it easy to integrate into PCB designs, saving space and facilitating automated assembly processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand elevated temperatures, ensuring reliable performance in demanding environments.

Diode Type: BRIDGE RECTIFIER DIODE

As a bridge rectifier diode, this product is specifically designed for converting AC voltage to DC voltage efficiently, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.05 V

The low maximum forward voltage drop of 1.05 V ensures minimal power loss and high efficiency in converting AC to DC voltage.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this bridge rectifier diode can handle moderate current loads, suitable for various electronic circuits and devices.

No. of Elements: 4

Having 4 elements increases the overall current-carrying capacity and reliability of the bridge rectifier, making it well-suited for applications requiring higher power handling capabilities.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage of 600 V provides robust protection against reverse voltage spikes, ensuring the longevity and reliability of the diode.

Maximum Non Repetitive Peak Forward Current: 30 A

The high maximum non-repetitive peak forward current of 30 A allows the diode to handle short-term current surges without damage, making it suitable for challenging operating conditions.

Technical Specifications

Bridge Rectifier Diodes DBD10G-TM attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Config:

BRIDGE, 4 ELEMENTS

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Trade Compliance

DBD10G-TM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 10