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DBD10C-TM

Onsemi

DBD10C-TM by Onsemi

The Onsemi DBD10C-TM is a surface mount Bridge Rectifier Diode with 4 elements, capable of handling up to 1A output current and 200V reverse voltage. With a max operating temperature of 150 °C, it is ideal for applications requiring efficient rectification in compact electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,903 parts In-Stock

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Digiode

USA . 420 parts In-Stock

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420

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Native Components

USA . 486 parts In-Stock

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$1.734

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486

$1.734

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Northwest PG Solutions

USA . 664 parts In-Stock

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$1.907

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664

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TANS Electronics

Latvia . 5,825 parts In-Stock

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5,825

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SupplyDigital Components

Austria . 4,469 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Corphita

USA . 1,166 parts In-Stock

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Kulean Microsystems

USA . 875 parts In-Stock

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UHIMA Technologies

Türkiye . 817 parts In-Stock

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Problanco Electronics

Mexico . 611 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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Overview

Get ready to experience top-notch quality and performance with the DBD10C-TM bridge rectifier diode by Onsemi. Known for their superior manufacturing standards, Onsemi delivers reliable and efficient components that meet the demands of various applications. Whether you're in need of power supplies, battery chargers, or motor drives, this surface mount diode offers a maximum output current of 1A and a maximum repetitive peak reverse voltage of 200V, ensuring smooth operation and long-lasting durability. Upgrade your electronic designs with the DBD10C-TM and enjoy the benefits of seamless functionality and peace of mind.

Feature Benefit Bullets

Config: BRIDGE, 4 ELEMENTS

Having 4 elements in the bridge configuration allows for higher current and voltage capabilities, making this product suitable for a wide range of applications.

Surface Mount: YES

Surface mount capability makes installation easier and more convenient, especially in compact electronic devices where space is limited.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this product can withstand higher temperatures, ensuring reliable performance in various environments.

Diode Type: BRIDGE RECTIFIER DIODE

Being a bridge rectifier diode, this product is capable of converting AC to DC efficiently, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.05 V

The low maximum forward voltage drop ensures minimal power loss and high efficiency in the rectification process.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this product can handle moderate power loads, suitable for many electronic circuits.

No. of Elements: 4

Having 4 elements in the bridge configuration provides redundancy and helps improve the overall reliability of the rectifier circuit.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage rating of 200 V ensures safe operation in circuits with varying voltage levels.

Maximum Non Repetitive Peak Forward Current: 30 A

The high maximum non-repetitive peak forward current rating of 30 A allows the bridge rectifier diode to handle short-term power surges without damage.

Technical Specifications

Bridge Rectifier Diodes DBD10C-TM attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Config:

BRIDGE, 4 ELEMENTS

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Trade Compliance

DBD10C-TM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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