Loading...

DBD10G-E

Onsemi

DBD10G-E by Onsemi

The Onsemi DBD10G-E is a bridge rectifier diode with 4 elements, max VF of 1.05V, and max output current of 1A. With a max operating temp of 150 °C, it's ideal for applications requiring high voltage (600V) and current (30A) rectification in various electronic circuits.

Median Price

$0.462

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,496 parts In-Stock

1+ parts

-

100+ parts

$0.462

1k+ parts

$0.384

10k+ parts

$0.342

2,496

-

$0.462

$0.384

$0.342

Verical

USA . 1,113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

$0.428

1,113

-

-

$0.480

$0.428

Arrow

USA . 45 parts In-Stock

1+ parts

-

100+ parts

$0.068

1k+ parts

-

10k+ parts

-

45

-

$0.068

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,186 parts In-Stock

1+ parts

$0.360

100+ parts

-

1k+ parts

-

10k+ parts

-

2,186

$0.360

-

-

-

Vyrian

USA . 3,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,133

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 443 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

443

$0.068

-

-

-

Corphita

USA . 2,210 parts In-Stock

1+ parts

$0.341

100+ parts

-

1k+ parts

-

10k+ parts

-

2,210

$0.341

-

-

-

Native Components

USA . 937 parts In-Stock

1+ parts

$1.047

100+ parts

-

1k+ parts

-

10k+ parts

-

937

$1.047

-

-

-

Northwest PG Solutions

USA . 1,572 parts In-Stock

1+ parts

$1.151

100+ parts

-

1k+ parts

-

10k+ parts

-

1,572

$1.151

-

-

-

AZTECH Wire

Italy . 451 parts In-Stock

1+ parts

$21.330

100+ parts

-

1k+ parts

-

10k+ parts

-

451

$21.330

-

-

-

TANS Electronics

Latvia . 6,565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,565

-

-

-

-

Kulean Microsystems

USA . 6,305 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,305

-

-

-

-

SupplyDigital Components

Austria . 6,152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,152

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,306

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Continental Prestige Electronics

USA . 2,863 parts In-Stock

1+ parts

-

100+ parts

$0.469

1k+ parts

-

10k+ parts

-

2,863

-

$0.469

-

-

Problanco Electronics

Mexico . 621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

621

-

-

-

-

Perfect Parts

USA . 211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

211

-

-

-

-

UHIMA Technologies

Türkiye . 172 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

172

-

-

-

-

Overview

Unlock a world of possibilities with the Onsemi DBD10G-E bridge rectifier diode. Known for its superior quality and reliability, Onsemi brings you a product that is perfect for a wide range of applications. From power supplies to motor drives, this bridge rectifier diode offers unmatched value and benefits to customers. Say goodbye to inefficiencies and hello to seamless performance with the DBD10G-E by Onsemi. Experience the difference today!

Feature Benefit Bullets

Config: BRIDGE, 4 ELEMENTS

Having 4 elements in the bridge configuration allows for better efficiency and current handling capabilities.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this bridge rectifier diode is suitable for a wide range of applications and environments.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish ensures good conductivity and reliable connections.

Diode Type: BRIDGE RECTIFIER DIODE

Being a bridge rectifier diode, this product is efficient in converting AC to DC.

Maximum Forward Voltage (VF): 1.05 V

The low maximum forward voltage of 1.05 V helps in reducing power losses and improving efficiency.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this bridge rectifier diode can handle moderate power requirements.

No. of Elements: 4

Having 4 elements allows for better reliability and redundancy in the circuit.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a maximum repetitive peak reverse voltage of 600 V, this diode can handle high voltage applications safely.

Maximum Non Repetitive Peak Forward Current: 30 A

The high maximum non repetitive peak forward current of 30 A allows for handling of short duration high current spikes.

Diode Element Material: SILICON

Silicon is a commonly used material for diodes, known for its reliability and efficiency.

Technical Specifications

Bridge Rectifier Diodes DBD10G-E attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-609 Code:

e6

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

4

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

DBD10G-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9