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DAN222

Onsemi

DAN222 by Onsemi

DAN222 by Onsemi is a common cathode rectifier diode with 2 elements, featuring a max forward voltage of 1.2V and output current of 0.1A. With a small outline package style, it is ideal for applications requiring fast reverse recovery time (0.004us) and operating temperatures up to 150 °C.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

1k+ parts

$0.041

10k+ parts

$0.028

3,000

$0.170

$0.065

$0.041

$0.028

Distributors (In-Stock)

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R&J Components

USA . 3,000 parts In-Stock

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Resion

USA . 3,000 parts In-Stock

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Vyrian

USA . 2,383 parts In-Stock

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A&K Electronics

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Bristol Electronics

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Digiode

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.037

100+ parts

$0.034

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$0.030

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-

60

$0.037

$0.034

$0.030

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Corohmni

South Africa . 79 parts In-Stock

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$0.053

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GreenTree Electronics

Israel . 330,000 parts In-Stock

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CPlus Electronics

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Metaverse IC Inc.

Canada . 105,000 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 5,417 parts In-Stock

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SupplyDigital Components

Austria . 5,323 parts In-Stock

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Kulean Microsystems

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Perfect Parts

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Northwest PG Solutions

USA . 1,698 parts In-Stock

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Native Components

USA . 1,279 parts In-Stock

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Corphita

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Assy Fe

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UHIMA Technologies

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TANS Electronics

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Authorized Procurement Solutions

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Overview

Step into a world of superior quality and performance with the DAN222 by Onsemi. Designed with precision and care, this rectifier diode offers unmatched reliability and efficiency in a compact package. Perfect for a variety of applications, this diode is a game-changer when it comes to power management and control. Say goodbye to subpar products and hello to a new level of excellence with the DAN222. Trust in Onsemi's reputation for excellence and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the diodes, making them suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration simplifies circuit design and connection, while having 2 elements provides redundancy and reliability.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time ensures efficient operation and performance of the diodes in switching applications.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate the diodes into electronic circuits or systems.

No. of Terminals: 3

Having 3 terminals allows for more versatile and flexible connectivity options in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diodes to withstand tough environmental conditions and ensures reliable performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability and electrical conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connecting the diodes in various orientations.

Maximum Power Dissipation: 0.15 W

Low power dissipation helps in reducing heat generation and improving overall efficiency of the diodes.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures quick and efficient soldering during assembly process.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and reliability of the diodes in harsh operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for converting AC to DC current efficiently, making them suitable for various power supply applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop ensures efficient conversion and minimal power loss in the circuit.

Maximum Output Current: 0.1 A

High maximum output current rating allows the diodes to handle higher current loads without overheating or damage.

Terminal Form: GULL WING

Gull wing terminal form provides good mechanical strength and stability for secure soldering and connection.

No. of Elements: 2

Having 2 elements provides redundancy and reliability, ensuring continuous operation even if one element fails.

Maximum Repetitive Peak Reverse Voltage: 80 V

High reverse voltage rating allows the diodes to withstand reverse voltage spikes or surges without breakdown.

Maximum Non Repetitive Peak Forward Current: 4 A

High peak forward current rating allows the diodes to handle short-term surge currents without damage.

Diode Element Material: SILICON

Silicon diodes offer good electrical characteristics, stability, and reliability for various electronic applications.

Technical Specifications

Diodes & Rectifiers DAN222 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DAN222 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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