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DAN222T1

Onsemi

DAN222T1 by Onsemi

The Onsemi DAN222T1 is a common cathode rectifier diode with 2 elements, featuring a max forward voltage of 1.2V and output current of 0.1A. With a max repetitive peak reverse voltage of 80V, it is ideal for applications requiring fast reverse recovery time (0.004us) in small outline packages at temperatures up to 150 °C.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 855,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

855,000

-

$0.066

$0.055

$0.049

Verical

USA . 726,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

726,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,181 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

2,181

$0.051

-

-

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Vyrian

USA . 2,328 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

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10k+ parts

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2,328

$0.054

-

-

-

DigiKey Marketplace

USA . 855,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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855,000

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-

-

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Standard Data Resources

USA . 57,000 parts In-Stock

1+ parts

-

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-

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57,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,319 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

1,319

$0.049

-

-

-

Corohmni

South Africa . 419 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

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-

419

$0.054

-

-

-

Native Components

USA . 839 parts In-Stock

1+ parts

$1.287

100+ parts

-

1k+ parts

-

10k+ parts

-

839

$1.287

-

-

-

Northwest PG Solutions

USA . 54 parts In-Stock

1+ parts

$1.416

100+ parts

-

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54

$1.416

-

-

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Continental Prestige Electronics

USA . 855,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.057

10k+ parts

-

855,000

-

-

$0.057

-

Assy Fe

Spain . 16,400 parts In-Stock

1+ parts

-

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16,400

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

1+ parts

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12,000

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SupplyDigital Components

Austria . 5,374 parts In-Stock

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5,374

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A-Z Elektronik GmbH

Germany . 4,671 parts In-Stock

1+ parts

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4,671

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Kulean Microsystems

USA . 4,435 parts In-Stock

1+ parts

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4,435

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TANS Electronics

Latvia . 4,356 parts In-Stock

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4,356

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Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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3,700

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Alle Elektronik GmbH

Germany . 3,114 parts In-Stock

1+ parts

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100+ parts

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3,114

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UHIMA Technologies

Türkiye . 859 parts In-Stock

1+ parts

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859

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Problanco Electronics

Mexico . 437 parts In-Stock

1+ parts

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437

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Overview

Get ready to experience the next level of performance with the DAN222T1 by Onsemi. Renowned for their superior quality and reliability, Onsemi has crafted this diode & rectifier with precision and expertise. Ideal for a wide range of applications, this product offers unparalleled value and benefits to customers. Whether you're looking for efficiency, durability, or versatility, the DAN222T1 delivers it all. Upgrade your electronics today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant to environmental factors, making the diode reliable in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Provides flexibility in circuit design and allows for easy integration into circuits with a common cathode configuration.

Surface Mount: YES

Enables easy and efficient mounting on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.004 us

Ensures efficient and fast switching performance, reducing energy loss in the diode and improving overall circuit efficiency.

Package Shape: RECTANGULAR

Facilitates proper orientation and alignment during assembly, contributing to a streamlined manufacturing process.

No. of Terminals: 3

Provides necessary connections for proper functioning in the circuit, allowing for easy integration and connectivity.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB and allows for high-density circuit designs.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliability and stability in various applications, even in demanding environments.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and reliability in PCB assembly, ensuring a secure connection and reducing the risk of failure.

Terminal Position: DUAL

Facilitates proper connection alignment and orientation, making installation easier and more efficient.

Maximum Power Dissipation: 0.15 W

Can handle moderate power levels, suitable for many low to medium power applications.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for proper reflow soldering without damaging the diode, ensuring reliable and consistent solder joints.

Peak Reflow Temperature °C: 235

Supports proper soldering processes, ensuring a strong and reliable connection between the diode and the PCB.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification, making it an ideal choice for many power supply and conversion applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop reduces power loss and heat generation, improving overall efficiency.

Maximum Output Current: 0.1 A

Suitable for low current applications, providing efficient operation within specified limits.

Terminal Form: GULL WING

Facilitates automated assembly processes, ensuring accurate and consistent placement on the PCB.

No. of Elements: 2

Dual elements offer redundancy and reliability, ensuring continuous operation even if one element fails.

Maximum Repetitive Peak Reverse Voltage: 80 V

Can withstand relatively high reverse voltages, suitable for many rectification and power conversion applications.

Maximum Non Repetitive Peak Forward Current: 2 A

Can handle short-duration high forward currents without damage, making it suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diodes are reliable, durable, and widely used in various applications, ensuring consistent performance and longevity.

Technical Specifications

Diodes & Rectifiers DAN222T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DAN222T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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