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DAN222G

Onsemi

DAN222G by Onsemi

DAN222G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.004 us. With a max operating temperature of 150°C, it is ideal for rectification applications in small outline packages. This rectifier diode has a max forward voltage of 1.2V and can handle up to 0.1A output current efficiently.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 15,000 parts In-Stock

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$0.023

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$0.023

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$0.023

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$0.023

Mouser Electronics

USA . 1,305 parts In-Stock

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$0.100

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$0.044

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$0.038

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$0.019

1,305

$0.100

$0.044

$0.038

$0.019

DigiKey

USA . 7,680 parts In-Stock

1+ parts

$0.170

100+ parts

$0.064

1k+ parts

$0.041

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$0.028

7,680

$0.170

$0.064

$0.041

$0.028

Flip Electronics (Authorized)

USA . 338,725 parts In-Stock

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Chip1Stop

Japan . 12,000 parts In-Stock

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$0.018

Rochester

USA . 9,000 parts In-Stock

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$0.020

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$0.017

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$0.015

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$0.020

$0.017

$0.015

Arrow

USA . 3,000 parts In-Stock

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Verical

USA . 3,000 parts In-Stock

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Vyrian

USA . 411 parts In-Stock

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411

$0.018

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Digiode

USA . 1,300 parts In-Stock

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$0.024

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1,300

$0.024

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Bristol Electronics

USA . 34,410 parts In-Stock

1+ parts

$0.087

100+ parts

$0.043

1k+ parts

$0.017

10k+ parts

$0.011

34,410

$0.087

$0.043

$0.017

$0.011

Flip Electronics

USA . 344,725 parts In-Stock

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Dan-Mar Components

USA . 38,809 parts In-Stock

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Chip Stock

USA . 33,500 parts In-Stock

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Atlantic Semiconductor

USA . 29,023 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9,000 parts In-Stock

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Speed Components Ltd

Israel . 1,000 parts In-Stock

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Astute Electronics Inc

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632

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Prism Electronics

USA . 239 parts In-Stock

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Cyclops Electronics Ltd

UK . 110 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 86,311 parts In-Stock

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$0.014

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Corohmni

South Africa . 427 parts In-Stock

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$0.018

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Corphita

USA . 1,089 parts In-Stock

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$0.022

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Native Components

USA . 708 parts In-Stock

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$0.501

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$0.501

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Northwest PG Solutions

USA . 1,900 parts In-Stock

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$0.551

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$0.486

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$0.551

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$0.486

Perfect Parts

USA . 287,534 parts In-Stock

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RC Electronics

USA . 114,228 parts In-Stock

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Kepictronics

USA . 36,000 parts In-Stock

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GreenTree Electronics

Israel . 33,000 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 10,500 parts In-Stock

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Lixinc

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Glotronic Ltd.

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 2,838 parts In-Stock

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Problanco Electronics

Mexico . 1,813 parts In-Stock

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TANS Electronics

Latvia . 1,346 parts In-Stock

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UHIMA Technologies

Türkiye . 551 parts In-Stock

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Kulean Microsystems

USA . 471 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality DAN222G diode by Onsemi. Designed with precision and reliability in mind, this diode offers superior performance and efficiency for a wide range of applications. From power supplies to battery chargers, the DAN222G is the perfect choice for your next project. Experience the value and benefits that Onsemi products provide, and take your designs to the next level with the DAN222G diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant to environmental factors, making the product reliable for long-term use.

Maximum Reverse Recovery Time: 0.004 us

Extremely fast reverse recovery time ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for a wide range of applications.

Maximum Power Dissipation: 0.15 W

Low power dissipation helps in reducing energy consumption and heat generation.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop helps in minimizing power losses and improves efficiency.

Maximum Output Current: 0.1 A

Capable of handling moderate current loads, suitable for various circuit designs.

Technical Specifications

Diodes & Rectifiers DAN222G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DAN222G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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