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DAN222T1G

Onsemi

DAN222T1G by Onsemi

DAN222T1G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.004 us. This small outline rectifier diode has a max forward voltage of 1.2V and output current of 0.1A, ideal for applications requiring fast switching speeds in electronic circuits.

Median Price

$0.039

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 28,122 parts In-Stock

1+ parts

$0.127

100+ parts

$0.067

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$0.045

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28,122

$0.127

$0.067

$0.045

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Mouser Electronics

USA . 15,761 parts In-Stock

1+ parts

$0.140

100+ parts

$0.061

1k+ parts

$0.039

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$0.019

15,761

$0.140

$0.061

$0.039

$0.019

DigiKey

USA . 9,284 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

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$0.041

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$0.028

9,284

$0.170

$0.065

$0.041

$0.028

Chip1Stop

Japan . 579,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 333,000 parts In-Stock

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Arrow

USA . 135,000 parts In-Stock

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Verical

USA . 135,000 parts In-Stock

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Rochester

USA . 87,037 parts In-Stock

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$0.021

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$0.017

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$0.015

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$0.015

Farnell

UK . 34,130 parts In-Stock

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$0.054

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$0.032

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$0.028

34,130

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$0.054

$0.032

$0.028

Element14

Singapore . 34,130 parts In-Stock

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$0.103

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$0.058

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$0.057

34,130

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$0.103

$0.058

$0.057

EBV Elektronik

Germany . 6,000 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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Distributors (In-Stock)

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Vyrian

USA . 913 parts In-Stock

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$0.015

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913

$0.015

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Digiode

USA . 640 parts In-Stock

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$0.024

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640

$0.024

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Bristol Electronics

USA . 19,858 parts In-Stock

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$0.089

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$0.045

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$0.018

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$0.011

19,858

$0.089

$0.045

$0.018

$0.011

TME

Poland . 2,933 parts In-Stock

1+ parts

$0.110

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$0.054

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$0.034

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$0.025

2,933

$0.110

$0.054

$0.034

$0.025

Flip Electronics

USA . 333,000 parts In-Stock

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Chip Stock

USA . 252,000 parts In-Stock

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IBS Electronics

USA . 39,000 parts In-Stock

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NAC Semi

USA . 33,000 parts In-Stock

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Dan-Mar Components

USA . 19,858 parts In-Stock

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Semi Source

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Cyclops Electronics Ltd

UK . 7,860 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,900 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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73

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Component Stockers USA

USA . 106,836 parts In-Stock

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106,836

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Corphita

USA . 2,410 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.079

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$0.072

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$0.065

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100

$0.079

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Perfect Parts

USA . 85,135 parts In-Stock

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Futuretech Components

Singapore . 62,980 parts In-Stock

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Continental Prestige Electronics

USA . 48,040 parts In-Stock

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Kepictronics

USA . 12,000 parts In-Stock

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Eastek

USA . 9,000 parts In-Stock

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Lixinc

USA . 8,156 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Kulean Microsystems

USA . 5,267 parts In-Stock

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SupplyDigital Components

Austria . 4,712 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 2,492 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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Problanco Electronics

Mexico . 804 parts In-Stock

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UHIMA Technologies

Türkiye . 295 parts In-Stock

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Netroflash

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GreenTree Electronics

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Authorized Procurement Solutions

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Overview

Discover the power of the DAN222T1G diode by Onsemi, a high-quality product that offers unmatched performance and reliability. With its common cathode configuration and small outline package style, this diode is ideal for a wide range of applications. Whether you're looking to enhance circuit efficiency or improve overall functionality, the DAN222T1G is the perfect choice. Trust in Onsemi's reputation for excellence and invest in a product that delivers exceptional value and benefits to customers. Experience the difference with the DAN222T1G diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy connection and integration into circuit designs.

Surface Mount: YES

Saves space and allows for automated assembly, increasing efficiency.

Maximum Reverse Recovery Time: 0.004 us

Ensures fast switching speed, important for applications requiring quick response times.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on PCBs.

No. of Terminals: 3

Provides multiple connection points for versatile circuit integration.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on PCBs.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Ensures good conductivity and corrosion resistance.

Terminal Position: DUAL

Allows for easy connection and flexibility in circuit layouts.

Maximum Power Dissipation: 0.15 W

Can handle moderate power levels without overheating.

Peak Reflow Temperature: 260C

Withstands high temperatures during soldering processes.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC, suitable for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop reduces power loss in the circuit.

Maximum Output Current: 0.1 A

Can handle moderate current levels in the circuit.

Terminal Form: GULL WING

SMT package design for easy soldering and assembly.

No. of Elements: 2

Dual elements provide redundancy and flexibility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 80 V

Can handle moderate voltage levels without breakdown.

Maximum Non Repetitive Peak Forward Current: 2 A

Can handle short-term high current spikes without damage.

Diode Element Material: SILICON

Highly reliable and commonly used material for diodes.

Technical Specifications

Diodes & Rectifiers DAN222T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DAN222T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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