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BU508A

Onsemi

BU508A by Onsemi

BU508A by Onsemi is a NPN BJT transistor with 125W power dissipation, 700V collector-emitter voltage, and 8A collector current. It is used as an amplifier in various applications due to its single configuration with built-in resistor. The transistor has a max operating temperature of 150°C and a nominal transition frequency of 7MHz.

Median Price

$5.675

Lifecycle Status

Suppliers In-Stock

39

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 3,344 parts In-Stock

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$4.540

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$4.060

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$3.820

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$3.820

DigiKey

USA . 3,344 parts In-Stock

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$5.980

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Verical

USA . 3,344 parts In-Stock

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$5.675

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$5.075

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Forefront Electronics and Design

USA . 2 parts In-Stock

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$2.940

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Nova Conductors

Japan . 750 parts In-Stock

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Digiode

USA . 5,113 parts In-Stock

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$4.798

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Ace Electronics

USA . 8 parts In-Stock

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American Microsemiconductor Inc.

USA . 55 parts In-Stock

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Anansix

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Vyrian

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Corel Iberica Componentes, S.L.

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Holdelec - ElecDif-Pro

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MRC Electronics

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Speed Components Ltd

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Prism Electronics

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Manoshevitz Elec. Sales

Israel . 12 parts In-Stock

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ABC Electronics Ltd.

UK . 11 parts In-Stock

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Donberg Electronics Ltd

Ireland . 8 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

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Elcom Components

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GES GmbH

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Corohmni

South Africa . 69 parts In-Stock

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$0.595

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Aztec Data Supply Inc.

USA . 1,733 parts In-Stock

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$0.728

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$0.728

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IDEA Electronic Components Group

UK . 2,118 parts In-Stock

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$1.442

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$1.297

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MKK Technologies

India . 488 parts In-Stock

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$2.711

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DigiPath Technology Company

USA . 488 parts In-Stock

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$2.711

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$2.711

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Semicontronic

India . 2,948 parts In-Stock

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$4.290

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$4.183

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$4.161

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2,948

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Corphita

USA . 6,168 parts In-Stock

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$4.545

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Netroflash

USA . 2,000 parts In-Stock

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$4.646

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$4.414

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$4.321

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$4.646

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$4.321

Component Stockers USA

USA . 620 parts In-Stock

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$99.990

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Kepictronics

USA . 36,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,378 parts In-Stock

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RC Electronics

USA . 17,718 parts In-Stock

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$2.220

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$2.090

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$2.050

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Metaverse IC Inc.

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SupplyDigital Components

Austria . 6,868 parts In-Stock

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Microchip USA

USA . 5,030 parts In-Stock

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Problanco Electronics

Mexico . 4,773 parts In-Stock

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UNI Independent Distributors

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Continental Prestige Electronics

USA . 3,588 parts In-Stock

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Parana Technologies

USA . 2,285 parts In-Stock

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$1.724

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TANS Electronics

Latvia . 1,135 parts In-Stock

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Kulean Microsystems

USA . 815 parts In-Stock

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Argo Parts USA

USA . 713 parts In-Stock

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UHIMA Technologies

Türkiye . 572 parts In-Stock

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Perfect Parts

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S.R.D Solutions

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GreenTree Electronics

Israel . 455 parts In-Stock

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Assy Fe

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Advanced Electronics

New Zealand . 58 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the BU508A Power Bipolar Junction Transistor from Onsemi. With a maximum power dissipation of 125W and a maximum collector-emitter voltage of 700V, this NPN transistor is ideal for amplifier applications. Its single configuration with a built-in resistor offers convenience and reliability. Trust in Onsemi's reputation for high-quality products to deliver exceptional value and benefits to your projects. Upgrade your electronics with the BU508A and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor components, ensuring reliable performance.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making this transistor suitable for a wide range of amplifier applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor convenient for use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability allows this transistor to handle large amounts of power without overheating, increasing its reliability.

Maximum Collector-Emitter Voltage: 700 V

Can withstand high voltage levels, making it suitable for applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 8 A

High collector current rating enables the transistor to handle high current loads, making it versatile for various circuit requirements.

Nominal Transition Frequency (fT): 7 MHz

High transition frequency allows for fast switching speeds, enhancing the performance of the transistor in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU508A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

2.25

JEDEC-95 Code:

TO-218AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BU508A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-293-9211, 5961012939211, 5961-14-410-8702, 5961144108702, 5961-12-322-1691, 5961123221691

NIIN

012939211, 144108702, 123221691

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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