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BU508AF

NXP Semiconductors

BU508AF by NXP Semiconductors

NXP Semiconductors' BU508AF is a NPN BJT transistor with 700V VCEsat, 8A IC, and 34W Pd. Ideal for switching applications, it has a hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$2.538

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

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Mouser Electronics

USA . 11,811 parts In-Stock

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$4.110

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$2.090

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DigiKey

USA . 828 parts In-Stock

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$5.750

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$3.238

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$2.277

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Arrow

USA . 3,000 parts In-Stock

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Verical

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Distributors (In-Stock)

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Nova Conductors

Japan . 900 parts In-Stock

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Digiode

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Vyrian

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Chip Stock

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Holdelec - ElecDif-Pro

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Goldney Electronics S.L.

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Halfin

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Micros

Poland . 100 parts In-Stock

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Partservice

France . 60 parts In-Stock

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$1.524

Micros sp.j. W. Kędra i J. Lic

Poland . 60 parts In-Stock

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$1.662

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$1.633

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$1.633

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LWI Electronics Inc

India . 46 parts In-Stock

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Huijzer Components

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ACDS - Activité Composants Distribution Service

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Pegasus Components GmbH

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Manoshevitz Elec. Sales

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Digital Electronic Gebert Verwaltungs UG

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ECAB

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Fibra_Brandt Electronic GMBH

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Euro-Tech

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Donberg Electronics Ltd

Ireland . 5 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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IDEA Electronic Components Group

UK . 1,438 parts In-Stock

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Corohmni

South Africa . 432 parts In-Stock

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MKK Technologies

India . 1,183 parts In-Stock

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DigiPath Technology Company

USA . 1,183 parts In-Stock

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Continental Prestige Electronics

USA . 3,132 parts In-Stock

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Argo Parts USA

USA . 2,689 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$1.811

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$1.775

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Aztec Data Supply Inc.

USA . 4,112 parts In-Stock

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Corphita

USA . 6,376 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,798 parts In-Stock

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Authorized Procurement Solutions

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RC Electronics

USA . 13,607 parts In-Stock

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Microchip USA

USA . 8,314 parts In-Stock

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Lixinc

USA . 6,855 parts In-Stock

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GreenTree Electronics

Israel . 3,900 parts In-Stock

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Metaverse IC Inc.

Canada . 3,800 parts In-Stock

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Glotronic Ltd.

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Alle Elektronik GmbH

Germany . 3,680 parts In-Stock

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S.R.D Solutions

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A-Z Elektronik GmbH

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Supply Digital

USA . 1,600 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 1,016 parts In-Stock

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$0.776

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Assy Fe

Spain . 1,016 parts In-Stock

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Kepictronics

USA . 600 parts In-Stock

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iodParts Technologies Inc.

India . 150 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 100 parts In-Stock

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Overview

Power up your projects with the BU508AF from NXP Semiconductors, a leading manufacturer of high-quality Power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 700V and a maximum power dissipation of 34W, ensuring reliable performance in a variety of electronic devices. With a minimum DC current gain of 6 and a nominal transition frequency of 7MHz, this transistor delivers exceptional value and efficiency. Trust NXP Semiconductors to provide top-notch components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

Being an NPN transistor, this product is suitable for use in low-power applications such as switching circuits.

Configuration: SINGLE

The single configuration of this transistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast operation and high efficiency.

Maximum VCEsat: 1 V

With a low VCEsat value, this transistor minimizes power loss and improves overall system efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and secure connections in the circuit.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide strong mechanical connections, making this transistor reliable in various environments.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit configurations and connections.

Maximum Power Dissipation (Abs): 34 W

The high power dissipation capability of this transistor allows it to handle large currents without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and easy installation in a variety of systems.

Maximum Power Dissipation Ambient: 34 W

This transistor can dissipate up to 34W of power in ambient conditions, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 6

With a minimum gain of 6, this transistor ensures consistent performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Able to operate at temperatures up to 150°C, this transistor is reliable in demanding industrial environments.

Maximum Collector-Emitter Voltage: 700 V

The high maximum voltage rating of 700V allows this transistor to be used in high-voltage applications.

Transistor Element Material: SILICON

The use of silicon material in the transistor element ensures high performance and reliability.

Maximum Collector Current (IC): 8 A

With a maximum current rating of 8A, this transistor can handle high currents without saturation.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance for long-lasting performance.

Terminal Position: SINGLE

The single terminal position simplifies connections and enhances the overall reliability of the transistor.

Case Connection: ISOLATED

The isolated case connection ensures proper insulation and prevents short circuits in the circuit.

Nominal Transition Frequency (fT): 7 MHz

With a nominal transition frequency of 7MHz, this transistor offers fast switching speeds for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU508AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

FORMED LEAD OPTIONS ARE AVAILABLE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

34 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

BU508AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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