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BD239A

Onsemi

BD239A by Onsemi

The Onsemi BD239A is a NPN BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 2A. With min hFE of 15, it's ideal for switching applications in various industries due to its single configuration and through-hole terminal form. The plastic/epoxy package ensures durability and reliability in flange mount style.

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Digiode

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Anansix

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Halfin

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Holdelec - ElecDif-Pro

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Greenchips

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SIE Connect GmbH - GreenChips

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Digital Electronic Gebert Verwaltungs UG

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Vyrian

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Rebound Electronics

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Fibra_Brandt Electronic GMBH

Germany . 12 parts In-Stock

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Euro-Tech

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ABC Electronics Ltd.

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Huijzer Components

Netherlands . 4 parts In-Stock

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ECAB

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IDEA Electronic Components Group

UK . 1,094 parts In-Stock

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Native Components

USA . 251 parts In-Stock

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Northwest PG Solutions

USA . 2,284 parts In-Stock

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MKK Technologies

India . 2,037 parts In-Stock

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DigiPath Technology Company

USA . 2,037 parts In-Stock

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Ampacity Inc.

Singapore . 1,644 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Parana Technologies

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Overview

Unleash the power of high-quality and reliable technology with the BD239A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Power Bipolar Junction Transistors like the BD239A, perfect for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 2A, this NPN transistor offers unmatched performance and efficiency. Experience seamless operation and superior functionality with the BD239A, providing customers with exceptional value and benefits for all their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards and efficient use of space.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure connection, making it easy to solder the transistor onto a circuit board.

No. of Terminals: 3

With three terminals, this transistor can easily be connected in a circuit for amplification or switching purposes.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting to a heatsink, dissipating heat efficiently and enhancing the transistor's performance.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable and consistent amplification of current in a circuit.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this transistor can handle a variety of voltage levels in different applications.

Transistor Element Material: SILICON

Silicon transistors offer good thermal conductivity and high temperature resistance, ensuring the transistor's stability and longevity.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle significant current loads in various circuit applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures correct orientation when integrating the transistor into a circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD239A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD239A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-082-2843, 5961010822843, 5961-14-314-1712, 5961143141712

NIIN

010822843, 143141712

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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